MDMA110P1200TG
Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 1200 V
=
=
110 A
1.14 V
Phase leg
Part number
MDMA110P1200TG
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
TO-240AA
●
Isolation Voltage: 4800 V~
●
Industry standard outline
●
RoHS compliant
●
Height: 30 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA110P1200TG
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
0.82
2.8
0.20
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
73
415
2.00
2.16
1.70
1.84
V
mΩ
K/W
W
kA
kA
kA
kA
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1300
V
1200
100
2
1.21
1.44
1.14
1.44
110
V
µA
mA
V
V
V
V
A
V
R
= 1200 V
V
R
= 1200 V
I
F
= 110 A
I
F
= 220 A
I
F
= 110 A
I
F
= 220 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 100 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.3 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
20.0 kA²s
19.4 kA²s
14.5 kA²s
14.0 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA110P1200TG
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
76
2.5
2.5
13.0
16.0
9.7
16.0
4800
4000
4
4
Date Code +
Assembly Line
Circuit
yywwAA
Part description
M
D
M
A
110
P
1200
TG
=
=
=
=
=
=
=
=
Module
Diode
Standard Rectifier
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
TO-240AA
Part Number
Lot.No: xxxxxx
Data Matrix
Ordering
Standard
Ordering Number
MDMA110P1200TG
Marking on Product
MDMA110P1200TG
Delivery Mode
Box
Quantity
36
Code No.
514304
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.82
1.6
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA110P1200TG
Outlines TO-240AA
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
MDMA110P1200TG
Rectifier
300
10
5
V
R
= 0 V
250
1600
200
I
F
150
I
FSM
1200
T
VJ
= 45°C
I
2
t
10
4
T
VJ
= 45°C
[A]
100
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
0.5
1.0
1.5
2.0
[A]
T
VJ
= 150°C
[A s]
T
VJ
= 150°C
2
50
800
50 Hz, 80%V
RRM
10
3
0.001
0.01
0.1
1
1
2
0
2
3
4 5 6 7 8 910
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
180
t [s]
Fig. 2 Surge overload current
vs. time per diode
200
t [ms]
Fig. 3 I t versus time per diode
150
120
P
tot
90
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
=
0.1 K/W
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
160
I
F(AV)M
120
DC =
1
0.5
0.4
0.33
0.17
0.08
[W]
60
[A]
80
30
40
0
0
20
40
60
80
100
120
0
50
100
150
0
0
50
100
150
I
F(AV)M
[A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0.35
0.30
0.25
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Z
thJC
0.20
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.01
0.04
0.16
0.09
t
i
(s)
0.001
0.013
0.070
0.400
[K/W]
0.15
0.10
0.05
0.00
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c
© 2016 IXYS all rights reserved
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
