IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA410Y-800BT
3Q Hi-Com Triac
9 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)
internally insulated plastic package. This "series BT" triac will commutate the full RMS
current at the maximum rated junction temperature (T
j(max)
= 150 °C) without the aid of a
snubber. It is used in applications where "high junction operating temperature capability"
is required.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High T
j(max)
Isolated mounting base with 2500 V (RMS) isolation
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
Electronic thermostats (heating and cooling)
Motor controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
mb
≤ 120 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
100
150
10
Unit
V
A
°C
A
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TO
-2
20A
B
NXP Semiconductors
BTA410Y-800BT
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
2
Typ
-
-
-
Max
50
50
50
Unit
mA
mA
mA
Static characteristics
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
20
-
-
A/ms
1000
-
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78D)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA410Y-800BT
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
Type number
BTA410Y-800BT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 June 2014
2 / 13
NXP Semiconductors
BTA410Y-800BT
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 120 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
12
I
T(RMS)
(A)
8
15
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
10
100
110
50
100
2
5
0.5
150
150
003aaj474
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003aaj475
25
I
T(RMS)
(A)
20
120 °C
10
4
5
0
-50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; T
mb
= 120 °C
RMS on-state current as a function of surge
duration; maximum values
BTA410Y-800BT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 June 2014
3 / 13
NXP Semiconductors
BTA410Y-800BT
3Q Hi-Com Triac
15
P
tot
(W)
12
003aaj477
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
115.5
T
mb(max)
(°C)
122.4
α = 180°
120°
90°
60°
30°
9
129.3
6
136.2
3
143.1
0
0
2.5
5
7.5
10
I
T(RMS)
(A)
150
12.5
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
I
TSM
(A)
100
80
60
40
20
0
120
Total power dissipation as a function of RMS on-state current; maximum values
003aaj340
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA410Y-800BT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 June 2014
4 / 13
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