AUTOMOTIVE GRADE
AUIRFS3806
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
60V
12.6m
15.8m
43A
Features
Advanced Process Technology
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Base part number
AUIRFS3806
Package Type
D
2
-Pak
S
G
D
2
-Pak
AUIRFS3806
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS3806
AUIRFS3806TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
43
31
170
71
0.47
± 20
73
25
7.1
24
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
2.12
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-10-12
AUIRFS3806
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
60
–––
–––
2.0
41
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
12.6
–––
–––
0.79
–––
–––
–––
–––
22
5.0
6.3
28.3
6.3
40
49
47
1150
130
67
190
230
–––
15.8
4.0
–––
–––
20
250
100
-100
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
0.075 –––
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 25A
V
V
DS
= V
GS
, I
D
= 50µA
S V
DS
= 10V, I
D
= 25A
V
DS
= 60V, V
GS
= 0V
µA
V
DS
= 48V,V
GS
= 0V,T
J
=125°C
nA
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
D
= 25A
V
DS
= 30V
nC
V
GS
= 10V
V
DD
= 39V
I
D
= 25A
ns
R
G
= 20
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 48V
V
GS
= 0V, V
DS
= 0V to 48V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 25A,V
GS
= 0V
T
J
= 25°C
ns
V
DD
= 51V,
T
J
= 125°C
T
J
= 25°C
I
F
= 25A
nC
T
J
= 125°C di/dt = 100A/µs
A T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Notes:
Typ. Max. Units
–––
–––
–––
22
26
17
24
1.4
43
170
1.3
33
39
26
36
–––
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.23mH, R
G
= 25, I
AS
= 25A, V
GS
=10V. Part not recommended for use above this value.
I
SD
25A,
di/dt
1580A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2017-10-12
AUIRFS3806
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.5
R DS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
ID = 25A
VGS = 10V
2.0
(Normalized)
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
12.0
ID= 25A
VGS , Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
1000
Ciss
VDS = 48V
VDS = 30V
VDS = 12V
Coss
C rss
100
10
1
10
VDS , Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2017-10-12
AUIRFS3806
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
100
1msec
100µsec
10
10msec
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS , Drain-to-Source Voltage (V)
100
DC
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
45
40
35
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
80
Id = 5mA
75
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
70
65
60
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
Fg 9.
Maximum Drain Current vs. Case Temperature
0.4
0.3
0.3
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
300
EAS , Single Pulse Avalanche Energy (mJ)
250
200
150
100
50
0
25
50
75
100
ID
TOP
2.8A
5.1A
BOTTOM 25A
0.2
0.2
0.1
0.1
0.0
-10
0
10
20
30
40
50
60
70
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2017-10-12
AUIRFS3806
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
Ri (°C/W)
C
1
2
2
3
3
0.1
0.10
0.05
0.02
0.01
J
R
1
R
1
J
1
R
2
R
2
R
3
R
3
i
(sec)
0.00026
0.001228
0.00812
0.6086
0.9926
0.5203
Ci=
iRi
Ci=
iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
Avalanche Current (A)
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
1.0E-03
tav (sec)
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
80
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 25A
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
EAR , Avalanche Energy (mJ)
2017-10-12
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