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BC807-40-TP

产品描述Bipolar Transistors - BJT PNP 45V 0.5A
产品类别半导体    分立半导体   
文件大小269KB,共3页
制造商MCC
官网地址http://www.mccsemi.com
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BC807-40-TP概述

Bipolar Transistors - BJT PNP 45V 0.5A

BC807-40-TP规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
MCC
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23-3
Transistor PolarityPNP
Collector- Emitter Voltage VCEO Max45 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.5 A
Gain Bandwidth Product fT100 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
Continuous Collector Current0.5 A
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
0.3 W
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000282 oz

文档预览

下载PDF文档
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC807-16
BC807-25
BC807-40
PNP Silicon
General Purpose
Transistors
SOT-23
A
D
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 0.3Watts of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Mechanical Data
Case: SOT-23 Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approx.)
Device Marking:
BC807-16
5A
BC807-25
5B
BC807-40
5C
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=1.0uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=45Vdc,I
E
=0)
Collector Cutoff Current
(V
CE
=40V dc,I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
BC807-16
BC807-25
BC807-40
DC Current Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc,I
B
=50mAdc)
T
A
= 25°C
3
C
B
C
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Min
45
50
5.0
---
---
---
Max
---
---
---
0.1
0.2
0.1
Units
G
H
J
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
K
Vdc
Vdc
uAdc
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
ON CHARACTERISTICS
h
FE(1)
Suggested Solder
Pad Layout
100
160
250
40
---
---
---
250
400
600
---
0.7
1.2
403
---
---
---
---
Vdc
Vdc
°C/W
.037
.950
.037
.950
.031
.800
.035
.900
.079
2.000
inches
mm
h
FE(2)
V
CE(sat)
V
BE(sat)
R
θJA
SMALL SIGNAL CHARACTERISTICS
f
T
Current-Gain-Bandwidth Product
(V
CE
=5.0V, f=100MHz, I
C
=10mA)
100
---
MHz
www.mccsemi.com
Revision:
D
1
of 3
2013/06/04

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