VS-MBRS120TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
SMB
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
1.0 A
20 V
20 mA at 125 °C
DESCRIPTION
The VS-MBRS120TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.0 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.0
20
310
0.35
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRS120TRPbF
20
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
L
= 138 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
VALUES
1.0
310
40
2.0
0.8
mJ
A
A
UNITS
Document Number: 94316
Revision: 05-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-MBRS120TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1A
2A
Maximum forward voltage drop
V
FM (1)
1A
2A
1A
2A
T
J
= 25 °C
Maximum reverse leakage current
I
RM (1)
C
T
L
S
dV/dt
T
J
= 100 °C
T
J
= 125 °C
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
V
R
= Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
TYP.
0.42
0.46
0.33
0.39
0.30
0.36
0.015
2.0
7.0
110
2.0
-
MAX.
0.45
0.52
0.37
0.45
0.35
0.43
0.2
6.0
20
-
-
10 000
pF
nH
V/μs
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Device marking
Notes
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
R
thJA
DC operation
TEST CONDITIONS
VALUES
- 65 to 150
30
UNITS
°C
°C/W
80
0.10
0.003
Case style SMB (similar to DO-214AA)
V12
g
oz.
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
(2)
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94316
Revision: 05-Mar-10
VS-MBRS120TRPbF
Schottky Rectifier, 1.0 A
Vishay High Power Products
Allowable Case Temperature (°C)
10
150
I
F
- Instantaneous
Forward Current (A)
145
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1
140
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Square wave
135
DC
See note (1)
130
0.1
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
0.5
100
I
R
- Reverse Current (mA)
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
Average Power Loss (W)
0.4
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
0.3
0.1
0.01
0.001
0.0001
T
J
= 75 °C
0.2
DC
T
J
= 50 °C
T
J
= 25 °C
0.1
0
0
5
10
15
20
0
0.4
0.8
1.2
1.6
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
1000
C
T
- Junction Capacitance (pF)
At any rated load condition
and with rated V
RRM
applied
following surge
T
J
= 25 °C
100
100
T
J
= 25 °C
10
10
0
4
8
12
16
20
10
100
1000
10 000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D)
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
Document Number: 94316
Revision: 05-Mar-10
VS-MBRS120TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
1
2
3
4
5
6
7
S
3
1
4
20
5
TR
6
PbF
7
2
-
-
-
-
-
-
-
HPP product suffix
Schottky MBR series
S = SMB
Current rating (1 = 1 A)
Voltage rating (20 = 20 V)
TR = Tape and reel (3000 pieces)
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95017
www.vishay.com/doc?95029
www.vishay.com/doc?95034
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94316
Revision: 05-Mar-10
Outline Dimensions
Vishay High Power Products
SMB
DIMENSIONS
in millimeters (inches)
2.15 (0.085)
1.80 (0.071)
3.80 (0.150)
3.30 (0.130)
1
2
4.70 (0.185)
4.10 (0.161)
1 Polarity
2 Part Number
2.5 TYP.
(0.098 TYP.)
2.40 (0.094)
1.90 (0.075)
0.30 (0.012)
0.15 (0.006)
Soldering pad
1.30 (0.051)
0.76 (0.030)
5.60 (0.220)
5.00 (0.197)
2.0 TYP.
(0.079 TYP.)
4.2 (0.165)
4.0 (0.157)
Document Number: 95017
Revision: 25-Jun-07
For technical questions concerning discrete products, contact: diodes-tech@vishay.com
For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
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