TGA4030-SM
17 – 37 GHz MPA/Multiplier
Key Features
•
•
•
•
•
•
RF Output Frequency Range: 17 - 37 GHz
20 dB Nominal Gain
22 dBm Nominal Output Maximum Power
2x and 3x Multiplier Function
Bias: Vd = 5V, Id = 140mA
Package Dimensions: 3.0 x 3.0 x 1.1 mm
Primary Applications
Measured Performance
Bias at Vd = 5V, Id = 140mA and Vg = -0.75V (Typical)
25
20
15
15
10
S21
S11
S22
5
0
-5
-10
-15
-20
-25
17
21
25
29
33
37
•
•
•
•
Point-to-Point Radio
EW
Instrumentation
Frequency Multiplier
S11 & S22 (dB)
Product Description
The TriQuint TGA4030-SM is a Medium Power
Amplifier and Multiplier for wide band 17 – 37
GHz applications. The part is designed using
TriQuint’s 0.15um power pHEMT process.
The TGA4030-SM provides a nominal 20 dB
small signal gain with 22 dBm maximum output
power. For 2x and 3x Multiplier Function,
TGA4030-SM provides 15 dBm typical output
power @ 9 dBm Pin.
This part is ideally suited for applications such as
Point-to-Point Radio, EW, instrumentation and
frequency multipliers.
Evaluation boards are available upon request.
Lead-free and RoHS compliant
S21 (dB)
10
5
0
-5
-10
-15
Frequency (GHz)
Bias at Vd = 5V, Id = 140mA and Vg = -0.75V (Typical)
24
22
Psat (dBm)
20
18
16
14
12
10
17
19
21
23
25
27
29
31
33
35
37
39
Frequency (GHz)
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Jul 2007 © Rev -
1
TGA4030-SM
Table I
Absolute Maximum Ratings 1/
Symbol
Vd-Vg
Vd
Vg
Id
|Ig|
Pin
1/
Parameter
Drain to Gate Voltage range
Drain Supply Voltage Range
Gate Supply Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Value
8V
6V
-3 – 0 V
400 mA
1.38 mA
20 dBm
Notes
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
Table II
Recommended Operating Conditions
Symbol
Vd
Id
Vg
Vd1
Vg1
Drain Voltage
Drain Current
Gate Voltage (Typical)
Drain Voltage
Gate Voltage
Parameter
Value
5V
140 mA
-0.75 V
1V
-1.1 V
See bias plan on page 14 for amplifier and 2x multiplier, page 15 for 3x multiplier
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Jul 2007 © Rev -
TGA4030-SM
Table III
RF Characterization Table
Bias: Vd=5V, Id= 140mA, Vg = -0.75V (typical), T
A
= 25
°C
PARAMETER
RF Output Frequencies
S21, Small Signal Gain
S11, Input Return Loss
S22, Output Return Loss
Psat, Maximum Output
Power
P1dB, Output Power @ 1
dB Gain Compression
IMD3@ 11 dBm Pout/Tone
Output Power @ Pin = 9
dBm
Conversion Gain
Gain Temperature
coefficient
AMPLIFIER
17 - 37
20
10
5
22
18
30
-
-
-0.04
2X MULTIPLIER
22 - 38
-
-
5
3x MULTIPLIER
23 - 31
-
-
5
UNITS
GHz
dB
dB
dB
dBm
dBm
dBc
15
9
15
5
dBm
dB
dB/
o
C
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Jul 2007 © Rev -
TGA4030-SM
Table IV
Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 70 ºC
Value
Pd = 1.2 W
Tchannel = 150 ºC
Tm = 1.0E+6 Hrs
θjc
= 66.7 (ºC/W)
Tchannel = 116 ºC
Tm = 2.4E+7 Hrs
260 ºC Max
-65 to 150 ºC
Notes
1/ 2/
Thermal Resistance,
θjc
Vd = 5V
Id = 140mA
Pd = 0.7W
30 seconds
Mounting Temperature
Storage Temperature
1/
2/
For a median life, Tm, of 1E+6 hours, power dissipation is limited to
Pd(max) = (Tchannel ºC – Tbase ºC)/θjc.
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
1.4
Power Dissipated (W)
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
Baseplate Temp (C)
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Jul 2007 © Rev -
TGA4030-SM
Measured Data
Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical)
25
20
15
15
10
5
0
-5
-10
-15
-20
-25
10
15
20
25
30
35
40
45
10
5
0
-5
-10
-15
Frequency (GHz)
This is device s-parameter
28
24
S21 (dB)
20
16
12
8
4
0
10
15
20
25
30
35
40
45
25 C
-40 C
70 C
Frequency (GHz)
This is evaluation board s-parameter
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Jul 2007 © Rev -
S11 & S22 (dB)
S21 (dB)
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