16-megabit Flash + 4-megabit SRAM Stack Memory
| AT52BR1664A | AT52BR1664A-70CI | AT52BR1664AT | AT52BR1664A-90CI | AT52BR1664AT-90CI | AT52BR1664AT-70CI | |
|---|---|---|---|---|---|---|
| 描述 | 16-megabit Flash + 4-megabit SRAM Stack Memory | 16-megabit Flash + 4-megabit SRAM Stack Memory | 16-megabit Flash + 4-megabit SRAM Stack Memory | 16-megabit Flash + 4-megabit SRAM Stack Memory | 16-megabit Flash + 4-megabit SRAM Stack Memory | 16-megabit Flash + 4-megabit SRAM Stack Memory |
| 是否无铅 | - | 含铅 | - | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | - | 不符合 | - | 不符合 | 不符合 | 不符合 |
| 厂商名称 | - | Atmel (Microchip) | - | Atmel (Microchip) | Atmel (Microchip) | Atmel (Microchip) |
| 零件包装代码 | - | BGA | - | BGA | BGA | BGA |
| 包装说明 | - | TFBGA, BGA66,8X12,32 | - | TFBGA, BGA66,8X12,32 | TFBGA, BGA66,8X12,32 | TFBGA, BGA66,8X12,32 |
| 针数 | - | 66 | - | 66 | 66 | 66 |
| Reach Compliance Code | - | compli | - | compli | compli | compli |
| 最长访问时间 | - | 70 ns | - | 90 ns | 90 ns | 70 ns |
| 其他特性 | - | SRAM IS ORGANISED AS 256K X 16 | - | SRAM IS ORGANISED AS 256K X 16 | SRAM IS ORGANISED AS 256K X 16 | SRAM IS ORGANISED AS 256K X 16 |
| JESD-30 代码 | - | R-PBGA-B66 | - | R-PBGA-B66 | R-PBGA-B66 | R-PBGA-B66 |
| JESD-609代码 | - | e0 | - | e0 | e0 | e0 |
| 长度 | - | 10 mm | - | 10 mm | 10 mm | 10 mm |
| 内存密度 | - | 16777216 bi | - | 16777216 bi | 16777216 bi | 16777216 bi |
| 内存集成电路类型 | - | MEMORY CIRCUIT | - | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
| 内存宽度 | - | 16 | - | 16 | 16 | 16 |
| 混合内存类型 | - | FLASH+SRAM | - | FLASH+SRAM | FLASH+SRAM | FLASH+SRAM |
| 功能数量 | - | 1 | - | 1 | 1 | 1 |
| 端子数量 | - | 66 | - | 66 | 66 | 66 |
| 字数 | - | 1048576 words | - | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | - | 1000000 | - | 1000000 | 1000000 | 1000000 |
| 工作模式 | - | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | - | 85 °C | - | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | - | -40 °C | - | -40 °C | -40 °C | -40 °C |
| 组织 | - | 1MX16 | - | 1MX16 | 1MX16 | 1MX16 |
| 封装主体材料 | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | - | TFBGA | - | TFBGA | TFBGA | TFBGA |
| 封装等效代码 | - | BGA66,8X12,32 | - | BGA66,8X12,32 | BGA66,8X12,32 | BGA66,8X12,32 |
| 封装形状 | - | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | GRID ARRAY, THIN PROFILE, FINE PITCH | - | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | - | 240 | - | 240 | 240 | 240 |
| 电源 | - | 3 V | - | 3 V | 3 V | 3 V |
| 认证状态 | - | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | - | 1.2 mm | - | 1.2 mm | 1.2 mm | 1.2 mm |
| 最大压摆率 | - | 0.04 mA | - | 0.04 mA | 0.04 mA | 0.04 mA |
| 最大供电电压 (Vsup) | - | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V |
| 最小供电电压 (Vsup) | - | 2.7 V | - | 2.7 V | 2.7 V | 2.7 V |
| 标称供电电压 (Vsup) | - | 3 V | - | 3 V | 3 V | 3 V |
| 表面贴装 | - | YES | - | YES | YES | YES |
| 技术 | - | CMOS | - | CMOS | CMOS | CMOS |
| 温度等级 | - | INDUSTRIAL | - | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | - | BALL | - | BALL | BALL | BALL |
| 端子节距 | - | 0.8 mm | - | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | - | BOTTOM | - | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | - | 30 | - | 30 | 30 | 30 |
| 宽度 | - | 8 mm | - | 8 mm | 8 mm | 8 mm |
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