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MSM514221B-30JS: 产品描述262,263-Word x 4-Bit Field Memory; 产品类别存储存储; 文件大小146KB，共15页; 制造商OKI; 官网地址http://www.oki.com

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MSM514221B-30JS概述

262,263-Word x 4-Bit Field Memory

MSM514221B-30JS规格参数

参数名称	属性值
厂商名称	OKI
零件包装代码	SOJ
包装说明	SOJ,
针数	20
Reach Compliance Code	unknow
其他特性	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH
JESD-30 代码	R-PDSO-J20
长度	17.15 mm
内存密度	1048576 bi
内存集成电路类型	MEMORY CIRCUIT
内存宽度	4
功能数量	1
端子数量	20
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX4
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	SOJ
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
认证状态	Not Qualified
座面最大高度	3.55 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	J BEND
端子节距	1.27 mm
端子位置	DUAL
宽度	7.62 mm

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E2L0029-17-Y1

¡ Semiconductor

MSM514221B

¡ Semiconductor

262,263-Word

4-Bit Field Memory

This version: Jan. 1998

MSM514221B

Previous version: Dec. 1996

DESCRIRTION

The OKI MSM514221B is a high performance 1-Mbit, 256K

4-bit, Field Memory. It is designed

for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital

movies and Multi-media systems. It is a FRAM for wide or low end use as general commodity

TVs and VTRs, exclusively. The MSM514221B is not designed for the other use or high end use

in medical systems, professional graphics systems which require long term picture, and data

storage systems and others. The 1-Mbit capacity fits one field of a conventional NTSC TV screen.

Each of the 4-bit planes has separate serial write and read ports. These employ independent

control clocks to support asynchronous read and write operations. Different clock rates are also

supported that allow alternate data rates between write and read data streams.

The MSM514221B provides high speed FIFO, First-In First-Out, operation without external

refreshing: it refreshes its DRAM storage cells automatically, so that it appears fully static to the

users.

Moreover, fully static type memory cells and decoders for serial access enable refresh free serial

access operation, so that the serial read and/or write control clock can be halted high or low for

any duration as long as the power is on. Internal conflicts of memory access and refreshing

operations are prevented by special arbitration logic.

The MSM514221B's function is simple, and similar to a digital delay device whose delay-bit-

length is easily set by reset timing. The delay length, number of read delay clocks between write

and read, is determined by externally controlled write and read reset timings.

Additional SRAM serial registers, or line buffers for the initial access of 256

4-bit enable high

speed first-bit-access with no clock delay just after the write or read reset timings.

The MSM514221B is similar in operation and functionality to OKI 2-Mbit Field Memory

MSM518221.

1/15

MSM514221B-30JS相似产品对比

	MSM514221B-30JS	MSM514221B-30RS	MSM514221B-30ZS	MSM514221B-40JS	MSM514221B-40RS	MSM514221B-40ZS	MSM514221B-60JS	MSM514221B-60RS	MSM514221B-60ZS	MSM514221B
描述	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory	262,263-Word x 4-Bit Field Memory
厂商名称	OKI	-	OKI	OKI	OKI	OKI	OKI	OKI	OKI	-
零件包装代码	SOJ	DIP	ZIP	SOJ	DIP	ZIP	SOJ	DIP	ZIP	-
包装说明	SOJ,	DIP,	DIP,	SOJ,	DIP,	DIP,	SOJ,	DIP,	DIP,	-
针数	20	16	20	20	16	20	20	16	20	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	-
其他特性	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	INTERNAL 4 X 512 ROWS X 512 COLUMNS OF DRAM CELLS; SELF REFRESH	-
JESD-30 代码	R-PDSO-J20	R-PDIP-T16	R-PZIP-T20	R-PDSO-J20	R-PDIP-T16	R-PZIP-T20	R-PDSO-J20	R-PDIP-T16	R-PZIP-T20	-
长度	17.15 mm	19.05 mm	25.5 mm	17.15 mm	19.05 mm	25.5 mm	17.15 mm	19.05 mm	25.5 mm	-
内存密度	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	-
内存集成电路类型	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	-
内存宽度	4	4	4	4	4	4	4	4	4	-
功能数量	1	1	1	1	1	1	1	1	1	-
端子数量	20	16	20	20	16	20	20	16	20	-
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	-
字数代码	256000	256000	256000	256000	256000	256000	256000	256000	256000	-
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	-
组织	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	-
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装代码	SOJ	DIP	DIP	SOJ	DIP	DIP	SOJ	DIP	DIP	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
座面最大高度	3.55 mm	5.08 mm	10.16 mm	3.55 mm	5.08 mm	10.16 mm	3.55 mm	5.08 mm	10.16 mm	-
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	-
表面贴装	YES	NO	NO	YES	NO	NO	YES	NO	NO	-
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
端子形式	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	-
端子节距	1.27 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	-
端子位置	DUAL	DUAL	ZIG-ZAG	DUAL	DUAL	ZIG-ZAG	DUAL	DUAL	ZIG-ZAG	-
宽度	7.62 mm	7.62 mm	2.8 mm	7.62 mm	7.62 mm	2.8 mm	7.62 mm	7.62 mm	2.8 mm	-

MSM514221B-30JS

MSM514221B-30JS概述

MSM514221B-30JS规格参数

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MSM514221B-30JS相似产品对比

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