NVTFS4C13N
Power MOSFET
30 V, 9.4 mW, 40 A, Single N−Channel,
m8FL
Features
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVTFS4C13NWF − Wettable Flanks Product
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Notes 1, 2, 4)
Power Dissipation R
qJA
(Note 1, 2, 4)
Continuous Drain
Current R
qJC
(Note 1,
3, 4)
Power Dissipation
R
qJC
(Note 1, 3, 4)
Pulsed Drain Current
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
14
10
3.0
1.5
40
28
26
13
152
−55 to
+175
24
10
260
A
°C
A
mJ
°C
A
W
W
Unit
V
V
A
www.onsemi.com
V
(BR)DSS
30 V
R
DS(ON)
MAX
9.4 mW @ 10 V
I
D
MAX
40 A
14 mW @ 4.5 V
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, I
L
= 14 A
pk
, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
4C13
13WF
A
Y
WW
G
= Specific Device Code for
NVMTS4C13N
= Specific Device Code of
NVTFS4C13NWF
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Drain)
(Notes 1 and 4)
Junction−to−Ambient – Steady State
(Notes 1 and 2)
Symbol
R
qJC
R
qJA
Value
5.8
50
°C/W
Unit
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm
2
2 oz. Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2017
1
January, 2017 − Rev. 2
Publication Order Number:
NVTFS4C13N/D
NVTFS4C13N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
14.9
1.0
10
±100
1.3
4.8
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.82
0.69
23.4
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
12.1
11.3
9.7
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
9
35
13
5
6.0
26
16
3.0
ns
ns
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
770
443
127
0.165
7.8
1.4
2.9
3.7
3.6
15.2
V
nC
nC
pF
g
FS
R
G
T
A
= 25°C
I
D
= 30 A
I
D
= 12 A
7.5
11.2
40
1.0
9.4
14
mW
S
W
2.1
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
mV/°C
V
DS
= 1.5 V, I
D
= 15 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVTFS4C13N
TYPICAL CHARACTERISTICS
70
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
10
0
0
1
2
3
70
6.5 V
4.5 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
T
J
= 25°C
4
5
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
V
DS
= 5 V
10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 30 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
10
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
20
30
40
50
60
70
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
10
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NVTFS4C13N
TYPICAL CHARACTERISTICS
1000
900
C, CAPACITANCE (pF)
800
700
600
500
400
300
200
100
0
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
11
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
Q
gs
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
12
14
16
Q
T
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
100
t, TIME (ns)
t
r
t
d(off)
10
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (W)
100
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
25
20
15
10
5
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
T
J
= 125°C
T
J
= 25°C
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
Figure 10. Diode Forward Voltage vs. Current
10
10
ms
100
ms
I
DS
, (A)
1
V
GS
= 10 V
T
C
= 25°C
650 mm
2
2 oz Cu Pad
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
1 ms
dc
10 ms
0.1
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
NVTFS4C13N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
R
qJA(t)
(°C/W)
20%
10%
5%
2%
1%
0.1
Single Pulse
1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
50
45
40
35
G
FS
(S)
30
25
20
15
10
5
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
I
D
(A)
1
1.0E−06
1.0E−05
1.0E−04
1.E−03
I
PEAK
, DRAIN CURRENT (A)
100
T
J(initial)
= 25°C
10
T
J(initial)
= 125°C
T
AV
, TIME IN AVALANCHE (s)
Figure 13. G
FS
vs. I
D
Figure 14. Avalanche Characteristics
ORDERING INFORMATION
Device
NVTFS4C13NTAG
NVTFS4C13NWFTAG
NVTFS4C13NTWG
NVTFS4C13NWFTWG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
