AUTOMOTIVE GRADE
AUIRGP66524D0
AUIRGF66524D0
COOLiRIGBT
™
V
CES
= 600V
I
NOMINAL
= 24A
Tsc
6µs,
T
J(MAX)
= 175°C
V
CE(ON)
typ. = 1.60V
Applications
Air Conditioning Compressor
Auxiliary Motor Drive
Features
Low V
CE(on)
Trench IGBT Technology
Low Switching Losses
6µs SCSOA Guaranteed
Square RBSOA and 100% Clamp IL Tested
Positive V
CE(on)
Temperature Coefficient
Ultra Fast Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant, Automotive Qualified *
Base Part Number
AUIRGP66524D0
AUIRGF66524D0
TO-247AC
TO-247AD
Package Type
G
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
GC
E
E
G
CE
n-channel
TO-247AC
AUIRGP66524D0
TO-247AD
AUIRGF66524D0
G
Gate
C
Collector
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies
Enables Short Circuit Protection Scheme
Rugged Hard Switching Operation
Enables Easy Paralleling of Devices
Better Efficiency and Improved EMI Performance
Environmentally Friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
AUIRGP66524D0
AUIRGF66524D0
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
Nominal
Nominal Collector Current
24
I
C
@ T
C
= 25°C
Continuous Collector Current
60
I
C
@ T
C
= 100°C
Continuous Collector Current
40
A
I
CM
Pulse Collector Current, V
GE
= 15V
72
I
LM
Clamped Inductive Load Current, V
GE
= 20V
96
I
F
@ T
C
= 25°C
Diode Continous Forward Current
55
I
F
@ T
C
= 100°C
Diode Continous Forward Current
35
I
FM
Diode Maximum Forward Current
72
V
GE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
dV/dt
Maximum Voltage Transient
15
V/ns
P
D
@ T
C
= 25°C
Maximum Power Dissipation
214
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
107
-55 to +175
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
*
Qualification standards can be found at
http://www.irf.com/
1
www.irf.com
© 2014 International Rectifier
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October 10, 2014
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
Parameter
Thermal Resistance Junction-to-Case (each IGBT)
Thermal Resistance Junction-to-Case (each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
AUIRGP/F66524D0
Typ.
–––
–––
0.24
–––
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 100µA
—
V/°C V
GE
=0V, I
C
=20mA (25°C-175°C)
1.90
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 24A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
7.5
V
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
=V
GE
, I
C
=1mA(25°C-175°C)
—
S
V
CE
= 50V, I
C
= 24A, PW = 20µs
50
µA V
GE
= 0V, V
CE
= 600V
1.90
I
F
= 24A
V
—
I
F
= 24A, T
J
= 175°C
±100
nA V
GE
= ±20V
Units
nC
I
C
= 24A
V
GE
= 15V
V
CC
= 400V
Conditions
Max.
0.7
1.1
–––
40
Units
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Min. Typ.
Parameter
600
—
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
—
0.21
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
—
1.60
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
1.95
—
2.0
5.5
6.5
Gate Threshold Voltage
V
GE(th)
—
-28
V
GE(th)
/TJ Threshold Voltage temp. coefficient
—
21
gfe
Forward Transconductance
—
1.1
Collector-to-Emitter Leakage Current
I
CES
—
1.50
V
FM
Diode Forward Voltage Drop
—
1.40
—
—
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Total Gate Charge (turn-on)
—
50
80
Q
g
Gate-to-Emitter Charge (turn-on)
—
16
24
Q
ge
Q
gc
Gate-to-Collector Charge (turn-on)
—
26
39
E
on
Turn-On Switching Loss
—
915 1045
E
off
Turn-Off Switching Loss
—
280
395
E
total
Total Switching Loss
—
1195 1440
t
d(on)
Turn-On delay time
—
30
50
Rise time
—
25
45
t
r
t
d(off)
Turn-Off delay time
—
75
95
t
f
Fall time
—
25
45
E
on
Turn-On Switching Loss
—
1280
—
Turn-Off Switching Loss
—
550
—
E
off
E
total
Total Switching Loss
—
1830
—
t
d(on)
Turn-On delay time
—
30
—
t
r
Rise time
—
25
—
t
d(off)
Turn-Off delay time
—
100
—
t
f
Fall time
—
95
—
C
ies
Input Capacitance
—
1460
—
C
oes
Output Capacitance
—
120
—
C
res
Reverse Transfer Capacitance
—
50
—
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
µJ
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10, L = 740µH, T
J
= 25°C
Energy losses include tail & diode
reverse recovery
ns
µJ
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10, L = 740µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
V
CC
= 480V, Vp
≤
600V
Rg = 10, V
GE
= +20V to 0V
T
J
= 150°C, V
CC
= 400V, Vp
≤600V
Rg = 50, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 24A
V
GE
= 15V, Rg = 10, L = 740µH
ns
pF
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
FULL SQUARE
6
—
—
—
—
570
176
19
—
—
—
—
µs
µJ
ns
A
Pulse width limited by max. junction temperature.
2
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V
CC
= 80% (V
CES
), V
GE
= 20V, L = 740µH, R
G
= 10.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
is measured at T
J
approximately 90°C.
Submit Datasheet Feedback
October 10, 2014
© 2014 International Rectifier
70
60
50
40
30
20
10
0
0.1
1
10
Square Wave:
V
CC
AUIRGP/F66524D0
For both:
Duty cycle : 50%
Tj = 175°C
Tsink = 100°C
Gate drive as specified
Power Dissipation = 114W
Load Current ( A )
I
Diode as specified
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
70
60
200
250
50
Ptot (W)
IC (A)
40
30
20
150
100
50
10
0
25
50
75
100
TC (°C)
125
150
175
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 3
- Power Dissipation vs.
Case Temperature
1000
10µsec
10
IC (A)
100
100µsec
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
IC (A)
1
10
0.1
1
10
100
VCE (V)
1000
10000
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
@ 175°C; V
GE
=15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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October 10, 2014
96
84
72
60
ICE (A)
96
84
AUIRGP/F66524D0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
ICE (A)
48
36
24
12
0
0
2
4
6
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
72
60
48
36
24
12
0
8
10
0
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6
- - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
96
84
72
60
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
96
84
72
60
IF (A)
48
36
24
12
0
0
2
4
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
TJ = -40°C
TJ = 25°C
TJ =175°C
48
36
24
12
0
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V CE (V)
V F (V)
10
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
10
Fig. 9
- Typ. Diode Forward Characteristics
tp = 20µs
8
VCE (V)
VCE (V)
6
ICE = 12A
ICE = 24A
ICE = 48A
8
6
ICE = 12A
ICE = 24A
ICE = 48A
4
4
2
2
0
5
10
V GE (V)
15
20
0
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
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October 10, 2014
AUIRGP/F66524D0
10
IC, Collector-to-Emitter Current (A)
96
84
72
60
48
36
24
12
0
5
10
V GE (V)
15
20
4
5
6
7
8
9
10 11 12 13 14
V GE, Gate-to-Emitter Voltage (V)
TJ = 25°C
TJ = 175°C
8
VCE (V)
6
ICE = 12A
ICE = 24A
ICE = 48A
4
2
0
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
4000
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
3000
Swiching Time (ns)
EON
Energy (µJ)
tdOFF
100
tF
tdON
10
tR
2000
1000
EOFF
0
0
10
20
30
40
50
1
0
10
20
30
40
50
ICE (A)
ICE (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 740µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
2500
EON
Fig. 15
- Typ. Switching Time vs. IC
TJ = 175°C; L = 740µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
1000
2000
Swiching Time (ns)
tdOFF
100
tdON
tR
10
Energy (µJ)
1500
EOFF
1000
tF
500
0
0
20
40
60
80
100
0
20
40
60
80
100
RG ()
RG (
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 740µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 740µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
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October 10, 2014
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