NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 mW
Features
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
MAX
7.8 mW @ 10 V
I
D
MAX
97 A
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Gate−to−Source Voltage
−
Nonrepetitive
(T
P
< 10
ms)
Continuous Drain
Current
Power Dissipation
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
dV/dt
T
L
Symbol
V
DSS
V
GS
V
GS
I
D
Value
60
$20
30
97
68
150
383
−55
to
+175
97
157
4.1
260
W
A
°C
A
mJ
V/ns
°C
Unit
V
V
V
D
G
A
S
N−CHANNEL MOSFET
4
t
p
= 10
ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH, I
L(pk)
= 56 A)
Peak Diode Recovery (dV/dt)
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
1
2
3
TO−220AB
CASE 221A
STYLE 5
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient
−
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Max
1.0
36
Unit
°C/W
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
NTP
5863NG
AYWW
1
Gate
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
July, 2011
−
Rev. 2
1
Publication Order Number:
NTP5863N/D
NTP5863N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(th)
V
GS(th)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
RR
V
GS
= 0 V
dc
, I
S
= 48 A
dc
,
dI
S
/dt = 100 A/ms
T
J
= 25°C
T
J
= 150°C
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 48 A, R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 48 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 30 A
V
DS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
ref to 25°C
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
60
47
1.0
50
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
V
DS
= 0 V, V
GS
=
$20
V
V
GS
= V
DS
, I
D
= 250
mA
2.0
9.1
6.5
12
4.0
V
mV/°C
7.8
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
3200
350
230
55
3.4
14.5
19
0.4
W
ns
nC
pF
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V
I
S
= 48 A
0.96
0.85
32
20
12
28
nC
ns
1.5
V
dc
10
34
25
9.0
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTP5863N
TYPICAL PERFORMANCE CHARACTERISTICS
200
175
I
D
, DRAIN CURRENT (A)
150
125
100
75
50
25
0
0
1
2
3
4
5.0 V
5.5 V
200
175
I
D
, DRAIN CURRENT (A)
150
125
100
75
50
25
5
0
2
T
J
= 25°C
V
DS
≥
10 V
10 V
7.5 V
7.0 V
T
J
= 25°C
V
GS
= 6.5 V
4.5 V
T
J
= 125°C
3
4
T
J
=
−55°C
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
I
D
= 20 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0080
Figure 2. Transfer Characteristics
T
J
= 25°C
0.0075
0.0070
V
GS
= 10 V
0.0065
4
5
6
7
8
9
10
0.0060
10
20
30
40
50
60
70
80
90
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
I
D
= 20 A
V
GS
= 10 V
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
10,000
T
J
= 150°C
1000
T
J
= 25°C
100
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTP5863N
TYPICAL PERFORMANCE CHARACTERISTICS
4000
3500
C, CAPACITANCE (pF)
3000
2500
2000
1500
1000
500
0
C
rss
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
75
60
V
DS
6
4
2
0
Q
gs
Q
gd
V
GS
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
QT
8
45
30
15
0
60
I
D
= 48 A
T
J
= 25°C
0
10
20
30
40
50
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 48 V
I
D
= 48 A
V
GS
= 10 V
t, TIME (ns)
100
t
r
t
d(off)
10
t
f
t
d(on)
100
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
80
60
40
20
0
0.0
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
ms
1 ms
10 ms
dc
10
ms
160
140
120
100
80
60
40
20
0
25
Figure 10. Diode Forward Voltage vs. Current
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 56 A
I
D
, DRAIN CURRENT (A)
100
10
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1
0.1
0.1
100
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
NTP5863N
TYPICAL PERFORMANCE CHARACTERISTICS
10
r(t), Effective Transient Thermal Resistance
(°C/W)
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTP5863NG
Package
TO−220AB
(Pb−Free)
Shipping
†
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
