IGBT Transistors 30 Amps 1200V 3.4 Rds
参数名称 | 属性值 |
产品种类 Product Category | IGBT Transistors |
制造商 Manufacturer | IXYS ( Littelfuse ) |
RoHS | Details |
技术 Technology | Si |
封装 / 箱体 Package / Case | TO-268-3 |
安装风格 Mounting Style | SMD/SMT |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1200 V |
Collector-Emitter Saturation Voltage | 3.4 V |
Maximum Gate Emitter Voltage | +/- 20 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
系列 Packaging | Tube |
Continuous Collector Current | 30 A |
Continuous Collector Current Ic Max | 30 A |
高度 Height | 5.1 mm |
长度 Length | 16.05 mm |
工厂包装数量 Factory Pack Quantity | 30 |
宽度 Width | 14 mm |
单位重量 Unit Weight | 0.158733 oz |
IXST15N120BD1 | IXSH15N120BD1 | |
---|---|---|
描述 | IGBT Transistors 30 Amps 1200V 3.4 Rds | IGBT Transistors 30 Amps 1200V 3.4 Rds |
产品种类 Product Category |
IGBT Transistors | IGBT Transistors |
制造商 Manufacturer |
IXYS ( Littelfuse ) | IXYS ( Littelfuse ) |
RoHS | Details | Details |
技术 Technology |
Si | Si |
封装 / 箱体 Package / Case |
TO-268-3 | TO-247-3 |
安装风格 Mounting Style |
SMD/SMT | Through Hole |
Configuration | Single | Single |
Collector- Emitter Voltage VCEO Max | 1200 V | 1200 V |
Collector-Emitter Saturation Voltage | 3.4 V | 3.4 V |
Maximum Gate Emitter Voltage | +/- 20 V | +/- 20 V |
最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C |
系列 Packaging |
Tube | Tube |
Continuous Collector Current | 30 A | 30 A |
Continuous Collector Current Ic Max | 30 A | 30 A |
高度 Height |
5.1 mm | 21.46 mm |
长度 Length |
16.05 mm | 16.26 mm |
工厂包装数量 Factory Pack Quantity |
30 | 30 |
宽度 Width |
14 mm | 5.3 mm |
单位重量 Unit Weight |
0.158733 oz | 0.229281 oz |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved