1N6507
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays with common anode are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 10-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them to ground (see figure 1). This circuit application is further complimented by the
1N6506 (separate data sheet) that has a common cathode. An external TVS diode
may be added between the positive supply line and ground to prevent overvoltage on
the supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
14-PIN Ceramic DIP
FEATURES
•
•
•
•
•
•
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage V
BR
> 60 V at 10
μA
Low Leakage I
R
< 100nA at 40 V
Low Capacitance C < 8.0 pF
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6507 for a JANTX screen.
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20
μs
MAXIMUM RATINGS
•
•
•
•
•
•
•
V
BR
Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
I
O
Continuous Forward Current of 300 mA (Notes 1 & 3)
I
FSM
Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
400 mW Power Dissipation per Junction @ 25
o
C
600 mW Power Dissipation per Package @ 25
o
C (Note 4)
o
Operating Junction Temperature range –65 to +150 C
Storage Temperature range of –65 to +200
o
C
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
Each Diode
Pulsed: P
W
= 100 ms max; duty cycle <20%
o
o
Derate at 2.4 mA/ C above +25 C
o
o
Derate at 4.0 mW/ C above +25 C
MECHANICAL AND PACKAGING
•
•
•
•
•
14-PIN Ceramic DIP
Weight 2.05 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of package
Carrier Tubes; 25 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
o
C unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
V
F1
I
F
= 100 mA
(Note 1)
V
MAXIMUM
FORWARD
VOLTAGE
V
F2
I
F
= 500 mA
(Note 1)
V
MAXIMUM
REVERSE
CURRENT
I
R1
V
R
= 40 V
μA
MAXIMUM
CAPACITANCE
(PIN TO PIN)
MAXIMUM
FORWARD
RECOVERY TIME
t
fr
I
F
= 500 mA
ns
MAXIMUM
REVERSE
RECOVERY TIME
trr
I
F
=
I
R
= 200 mA
i
rr
= 20 mA
R
L
= 100 ohms
ns
1N6507
C
t
V
R
= 0 V
F = 1 MHz
pF
PART
NUMBER
1N6507
Copyright
©
2006
01-24-2006 REV C
1
1.5
0.1
8.0
40
20
NOTE 1:
Pulsed: P
W
= 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6507
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
SCOTTSDALE DIVISION
SYMBOLS & DEFINITIONS
Symbol
V
BR
V
F
I
R
I
FSM
C
t
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
Forward Surge Current: The peak forward surge current at a specified pulse width
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads
WWW .
Microsemi
.C
OM
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+V
CC
)
I/O Port
1N6507
GND (or -V
CC
)
Steering Diode Application
FIGURE 1
Copyright
©
2006
01-24-2006 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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