SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Motorola ( NXP ) |
| Reach Compliance Code | unknow |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 4 A |
| 基于收集器的最大容量 | 100 pF |
| 集电极-发射极最大电压 | 80 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 500 |
| JESD-30 代码 | R-PSIP-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | PNP |
| 功耗环境最大值 | 20 W |
| 最大功率耗散 (Abs) | 20 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 25 MHz |
| 最大关闭时间（toff） | 2900 ns |
| VCEsat-Max | 2.5 V |
| MJD6039-1 | MJD6039T4 | MJD6039 | MJD6036-1 | MJD6036 | MJD6036T4 | |
|---|---|---|---|---|---|---|
| 描述 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| 厂商名称 | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| 基于收集器的最大容量 | 100 pF | 100 pF | 100 pF | 200 pF | 200 pF | 200 pF |
| 集电极-发射极最大电压 | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 500 | 500 | 500 | 500 | 500 | 500 |
| JESD-30 代码 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 2 | 2 | 3 | 2 | 2 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP | PNP | NPN | NPN | NPN |
| 功耗环境最大值 | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | YES | YES | NO | YES | YES |
| 端子形式 | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 25 MHz | 25 MHz | 25 MHz | 25 MHz | 25 MHz | 25 MHz |
| 最大关闭时间（toff） | 2900 ns | 2900 ns | 2900 ns | 2900 ns | 2900 ns | 2900 ns |
| VCEsat-Max | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| JESD-609代码 | e0 | - | e0 | e0 | e0 | - |
| 最大功率耗散 (Abs) | 20 W | - | 20 W | 20 W | 20 W | - |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| 包装说明 | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
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