MJE802
MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The MJE802 and MJE803 are silicon
epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in
Jedec SOT-32 plastic package.They are intended
for use in medium power linear and switching
applications.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (I
B
= 0)
Base-Emitter Voltage (IC = 0)
Collector Current
Base Current
Total Power Dissipation at T
case
≤
25 C
o
Value
80
80
5
4
0.1
40
-65 to 150
150
Unit
V
V
V
A
A
W
o
o
Storage Temperature
Max Operating Junction Temperature
C
C
For PNP types voltage and current values are negative.
January 1997
1/4
MJE802-MJ803
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient
Max
3.13
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CB
= rated V
CBO
V
CB
= rated V
CBO
T
case =
100
o
C
V
CE
= rated V
CEO
V
EB
= 5 V
I
C
= 50 mA
I
C
= 4 A
I
C
= 1.5 A
I
C
= 4 A
I
C
= 1.5 A
I
C
= 4 A
I
C
= 1.5 A
I
C
= 1.5 A
f = 1 MHz
I
B
= 40 mA
I
B
= 30 mA
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
100
750
1
80
3
2.5
3
2.5
Min.
Typ.
Max.
100
500
100
2
Unit
µA
µA
µA
mA
V
V
V
V
V
I
CEO
I
EBO
Collector-Emitter
V
CEO(sus)
∗
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE
∗
h
FE
∗
h
fe
Collector-Emitter
Sustaining Voltage
Base-Emitter Voltage
DC Current Gain
Small Signal Current
Gain
* Pulsed: Pulse duration = 300µs, duty cycle
≤
1.5%
2/4
MJE802-MJ803
SOT-32 MECHANICAL DATA
mm
MIN.
A
B
b
b1
C
c1
D
e
e3
F
G
H
3
7.4
10.5
0.7
0.49
2.4
1.2
15.7
2.2
4.4
3.8
3.2
2.54
0.118
TYP.
MAX.
7.8
10.8
0.9
0.75
2.7
MIN.
0.291
0.413
0.028
0.019
0.04
0.047
0.618
0.087
0.173
0.150
0.126
0.100
inch
TYP.
MAX.
0.307
0.445
0.035
0.030
0.106
DIM.
0016114
3/4
MJE802-MJ803
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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..
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