DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC8187TB
DESCRIPTION
The
μ
PC8187TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless
transceiver. This IC is higher operating frequency, lower distortion and higher conversion gain than conventional
μ
PC8163TB.
This IC is manufactured using NEC’s 30 GHz f
max
UHS0 (Ultra High Speed Process) silicon bipolar process.
• High output frequency
• Supply voltage
• Higher IP
3
• High-density surface mounting : 6-pin super minimold package
: V
CC
= 2.7 to 3.3 V
APPLICATION
• TDMA, PCS, CDMA etc.
ORDERING INFORMATION
Part Number
Remark
DI
S
Document No. P15106EJ2V0DS00 (2nd edition)
Date Published January 2001 N CP(K)
CO
The mark
μ
PC8187TB-E3-A
6-pin super minimold
To order evaluation samples, please contact your local sales office.
(Part number for sample order:
μ
PC8187TB-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
NT
IN
: f
RFout
= 0.8 to 2.5 GHz
: OIP
3
= +10 dBm @ f
RFout
= 1.9 GHz
Package
Marking
C3G
FEATURES
•
Embossed tape 8 mm wide.
•
Pin 1, 2, 3 face the tape perforation side.
•
Qty 3 kpcs/reel.
Caution Electro-static sensitive devices
shows major revised points.
UE
Supplying Form
D
SILICON MMIC HI-IP
3
FREQUENCY UP-CONVERTER
FOR WIRELESS TRANSCEIVER
μ
PC8187TB
CONTENTS
1.
2.
3.
4.
PIN CONNECTIONS.............................................................................................................................3
SERIES PRODUCTS............................................................................................................................3
BLOCK DIAGRAM ...............................................................................................................................3
5.
6.
7.
8.
9.
PIN EXPLANATION..............................................................................................................................5
ABSOLUTE MAXIMUM RATINGS......................................................................................................6
RECOMMENDED OPERATING RANGE............................................................................................6
ELECTRICAL CHARACTERISTICS ....................................................................................................6
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY .........................................7
10. TEST CIRCUITS...................................................................................................................................8
10.1 TEST CIRCUIT 1 (f
RFout
= 0.83 GHz) .........................................................................................................8
10.2 TEST CIRCUIT 2 (f
RFout
= 1.9 GHz) ...........................................................................................................9
10.3 TEST CIRCUIT 3 (f
RFout
= 2.4 GHz) .........................................................................................................10
11. TYPICAL CHARACTERISTICS..........................................................................................................12
11.1 f
RFout
= 0.83 GHz ........................................................................................................................................13
11.3 f
RFout
= 2.4 GHz ..........................................................................................................................................21
11.2 f
RFout
= 1.9 GHz ..........................................................................................................................................17
12. S-PARAMETERS FOR EACH PORT...............................................................................................25
13. S-PARAMETERS FOR MATCHED RF OUTPUT ...........................................................................26
14. PACKAGE DIMENSIONS...................................................................................................................28
15. NOTE ON CORRECT USE ..............................................................................................................29
16. RECOMMENDED SOLDERING CONDITIONS................................................................................29
DI
S
2
CO
NT
IN
Data Sheet P15106EJ2V0DS
UE
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE
SYSTEM) ...............................................................................................................................................4
D
μ
PC8187TB
1. PIN CONNECTIONS
(Top View)
3
2
1
(Bottom View)
4
5
6
4
5
6
3
2
1
Pin No.
1
2
3
4
5
6
Pin Name
IFinput
GND
LOinput
GND
V
CC
C3G
2. SERIES PRODUCTS (T
A
= +25°C, V
CC
= V
PS
= V
RFout
= 3.0 V, Z
S
= Z
L
= 50
Ω
)
I
CC
(mA)
15
9
9
5
16.5
f
RFout
(GHz)
0.8 to 2.5
0.4 to 2.0
0.8 to 2.5
0.4 to.2.0
CG (dB)
Part Number
@RF 0.9 GHz
Note
11
9
@RF 1.9 GHz
11
7
μ
PC8187TB
μ
PC8106TB
μ
PC8172TB
μ
PC8109TB
μ
PC8163TB
NT
IN
9.5
6
8.5
4
0.8 to 2.0
9
5.5
P
O(sat)
(dBm)
@RF 1.9 GHz
+2.5
−4
0
@RF 2.4 GHz
+1
−
@RF 0.9 GHz
Note
+10
+5.5
−0.5
−
+7.5
−7.5
−2
+1.5
+9.5
−
(Top View)
LOinput
GND
IFinput
V
CC
Data Sheet P15106EJ2V0DS
Part Number
@RF 0.9 GHz
Note
+4
−2
μ
PC8187TB
μ
PC8106TB
μ
PC8172TB
μ
PC8109TB
μ
PC8163TB
UE
@RF 2.4 GHz
10
−
8.0
−
−
OIP
3
(dBm)
@RF 1.9 GHz
+10
+2.0
+6.0
−1.0
+6.0
GND
RFoutput
+0.5
−5.5
CO
+0.5
Note
f
RFout
= 0.83 GHz @
μ
PC8163TB and
μ
PC8187TB
Remark
Typical performance. Please refer to
8. ELECTRICAL CHARACTERISTICS
in detail.
To know the associated product, please refer to each latest data sheet.
DI
S
3. BLOCK DIAGRAM
D
RFoutput
@RF 2.4 GHz
+8.5
−
+4.0
−
−
3
μ
PC8187TB
4. SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)
Low Noise Tr.
RX
DEMOD.
I
Q
SW
VCO
÷N
PLL
PLL
TX
PA
μ
PC8187TB
Phase
shifter
90˚
DI
S
4
CO
Data Sheet P15106EJ2V0DS
NT
IN
UE
I
0˚
Q
D
μ
PC8187TB
5. PIN EXPLANATION
Pin
No.
1
Pin
Name
IFinput
Applied
Voltage
(V)
−
Pin
Voltage
(V)
Note
1.2
Function and Explanation
This pin is IF input to double bal-
anced mixer (DBM). The input is
designed as high impedance.
The circuit contributes to sup-
press spurious signal. Also this
symmetrical circuit can keep
specified performance insensitive
to process-condition distribution.
For above reason, double bal-
anced mixer is adopted.
Equivalent Circuit
UE
3
2
4
GND
GND
−
3
5
6
LOinput
V
CC
RFoutput
−
NT
IN
2.1
−
Local input pin. Recommendable
input level is
−10
to 0 dBm.
Supply voltage pin.
−
This pin is RF output from DBM.
This pin is designed as open
collector. Due to the high imped-
ance output, this pin should be
externally equipped with LC
matching circuit to next stage.
Data Sheet P15106EJ2V0DS
GND pin. Ground pattern on the
board should be formed as wide
as possible. Track Length should
be kept as short as possible to
minimize ground impedance.
2.7 to 3.3
Same
bias as
V
CC
through
external
inductor
DI
S
CO
Note
Each pin voltage is measured at V
CC
= V
RFout
= 2.8 V.
D
5
6
1
2
5
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