Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
Package Thermal Characteristics
(Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
) .......33.5°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
SUPPLY VOLTAGE
Input Supply Voltage
Input Supply Current
Internal LDO Output Voltage
V
S
Undervoltage Lockout
V
S
Undervoltage-Lockout
Hysteresis
CSP Undervoltage Lockout
ORING
ORing MOSFET Forward
Regulation Voltage
(V
IN_
- V
CSP
)
ORing MOSFET Reverse Bias
Turn-Off Voltage
ORing MOSFET Reverse Bias
Turn-On Voltage
ORing MOSFET Reverse Bias
Hysteresis Voltage
V
FWD_REG
V
REV_OFF
V
REV_ON
V
REV_HYS
V
IN_
- V
CSP
, V
CSP
rising
(V
CSP
> V
IN_
), V
OG_
goes low
V
IN_
- V
CSP
, V
CSP
falling
(V
IN_
> V
CSP_
), V
OG_
goes to
forward regulation
V
REV_OFF
- V
REV_ON
7.5
-12.5
+8.5
10
-10
+10
20
12.5
-7.5
+13.5
mV
mV
mV
mV
V
IN
I
IN
V
S
V
UVLO
V
UVLO_HYS
V
CSP_UVLO
V
CSP
rising
V
CSP
falling
2.4
2.25
V
S
rising
4.8
2.5
Hot swap and ORing
Current monitor
3.7
4.8
4
5
2.65
0.07
2.49
2.35
2.58
2.42
5.25
2.8
18
18
V
mA
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
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Maxim Integrated
│
2
MAX15068
Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
Electrical Characteristics (continued)
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
Turn-Off Switch Resistance
Turn-On Switch Resistance
ORing MOSFET Gate Drive
(V
OG_
- V
IN_
)
ORing MOSFET Fast Turn-On
Threshold
ORing MOSFET Fast Turn-Off
ORing MOSFET Turn-On
Delay
ORing MOSFET Turn-Off
Delay
PC
to OG2 Delay
HOT SWAP
V
CB
= 0V
Circuit-Breaker Accuracy
Active Current-Limit Sense
Voltage
Fast Comparator Threshold
Fast Comparator Response
Time
GATE Off Delay
GATE Propagation Delay
GATE Drive Voltage
(V
GATE
- V
OUT
)
GATE Pullup Current
GATE Pulldown Current
(Timeout)
GATE Fast Pulldown Current
HOT-SWAP FOLDBACK
Minimum CB Voltage
Minimum FB Voltage
V
CB_FBMAX
V
FBMIN
(V
CSP
- V
CSN
) = 12V
V
CSP
- V
OUT,
at V
CB
= V
CB_FBMAX
3
1
8.33
2
15
3.2
V
CB_TH
V
%
V
CB_TH
V
CSP
- V
CSN
V
CB
= Hi-Z
V
CB
= V
S
V
ACL
V
FC_TH
t
FC_DLY
t
OFF_GATE
t
ON_GATE_PD
V
GATE
I
GATE_ON
I
GATE_OFF
I
GATE_FAST_
OFF
SYMBOL
R
DS_OFF
R
DS_ON
V
OG_
V
FWD_ON
V
FWD_OFF
t
ON_OG_
t
OFF_OG_
t
LH_DLY
CONDITIONS
V
IN_
- V
CSP
= -50mV, I = 50mA
V
IN_
- V
CSP_
= 120mV, I = 70mA
3.75V < V
IN_
< 18V
V
IN_
- V
CSP
rising
V
IN_
- V
CSP
falling, V
OG_
goes to
forward regulation
C
GATE
= 10nF, V
IN_
- V
CSP
= +0.05V
C
GATE
= 10nF, V
IN_
- V
CSP
= -0.05V,
V
OG_
= 0.1 x (V
CP_
- V
IN_
)
V
PC
falling edge to V
OG2
going high
MIN
TYP
0.8
2
MAX
UNITS
Ω
Ω
6
11
80
40
150
200
40
12
V
mV
mV
ns
300
65
37.1
52.5
68.9
ns
µs
32.9
47.5
61.1
35
50
65
V
CB_TH
1.3 x
3x
mV
mV
mV
ns
40
20
20
µs
µs
V
-7
650
260
µA
µA
mA
V
CSP
- V
CSN
V
CSP
- V
CSN
= 300mV, C
GATE
= 10nF
(Note 3)
V
EN
high to V
GATE
low
V
ON
low to V
GATE
low
V
ON
= step 0.8V to 2V
3.7V < V
IN_
< 18V
V
GATE
- V
OUT
= 0V
V
OUT
= 12V, V
GATE
= V
OUT
+ 5V
V
OUT
= 12V, V
GATE
= V
OUT
+ 5V
6
-13
350
75
V
CB_TH
200
20
10
10
11
-10
500
200
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Maxim Integrated
│
3
MAX15068
Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
Electrical Characteristics (continued)
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
Maximum FB Voltage
CURRENT-SENSING INPUT
CSP Input Current
CSN Input Current
CDLY
CDLY Upper Threshold
CDLY Lower Threshold
Hysteresis
CDLY Pullup Current
CDLY Pulldown Current
CDLY Ratio
POWER-GOOD (PG)
PG
Threshold OUT
PG
Threshold GATE
PG
Detection Timeout
PG
Assertion Delay
OUTPUTS (FAULT,
PG)
FAULT, PG
Output Voltage Low
FAULT, PG
Output Voltage High
FAULT, PG
Leakage Current
FAULT, PG
Pullup Current
INPUTS
ON,
PC, EN
Turn-On Threshold
ON,
PC, EN
Turn-On Threshold
Hysteresis
ON Fault Reset Threshold
Voltage
ON,
PC
Input Leakage Current
ON,
PC
Clamp Voltage
ON,
PC
Clamp Sink
EN
Pullup Current
CB THREE-STATE INPUT
CB Input Low Current
CB Input High Current
I
IN_LOW
I
IN_HIGH
V
CB
= 0.4V
V
CB
= V
S
- 0.2V
-75
+75
µA
µA
I
PU
V
ON_TH
V
ON_HYS
V
ON_RESET
I
LEAK
V
ON
, V
PC
, V
EN
rising
V
ON
, V
PC
, V
EN
falling
V
ON
falling
V
ON
, V
PC
= 0 to 2.5V
I
SINK
= 1µA
V
ON
, V
PC
= 5V
V
EN
= 0V
-13
1.1
70
0.5
-1
3
350
-10
-7
1.22
123
0.6
1.32
180
0.7
+1
V
mV
V
µA
V
µA
µA
V
PG_OUT
V
PG_GATE
t
PG_STARTUP
t
PG_DELAY
V
OL
V
OH
I
OH
I
PU
I
PG
= I
FAULT
= 1mA
I
PG
= I
FAULT
= 1µA
V
PG
= V
FAULT
= 18V
V
PG
= V
FAULT
= 1.5V
V
S
- 1
-1
-13
-10
V
S
- 0.6
+20
-7
V
GATE
> (5V + V
OUT
)
V
GATE
- V
OUT
55
13
0.9 x V
CSP
4.2
70
16
85
19
0.4
V
V
ms
ms
V
V
µA
µA
V
CDLY_U
V
CDLY_L
I
CDLY_UP
I
CDLY_DOWN
I
CDLY_RATIO
V
CDLY
rising
V
CDLY
falling
-132
1.2
1.4
1.1
1.2
0.2
-100
2
2
-70
2.8
3.2
1.3
V
V
µA
µA
%
I
CSP
I
CSN
V
CSP
= 12V
V
CSN
= 12V
100
0.5
200
1.0
400
mA
µA
SYMBOL
V
FBMAX
CONDITIONS
V
CSP
- V
OUT
, at V
CB
= V
CB_TH
MIN
9
TYP
10
MAX
11
UNITS
V
www.maximintegrated.com
Maxim Integrated
│
4
MAX15068
Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
Electrical Characteristics (continued)
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
CB Input Open-Current Voltage
CB Low Voltage
CB High Voltage
CURRENT MONITORING
Current Monitor vs. Undervoltage
Lockout
I
MON_UVLO
V
S
rising
4.1
T
A
= +25°C
-80
-200
-240
-300
2.991
2.9595
2.955
4.16
0.1
+80
+200
-240
+300
3.009
3.0405
3.045
mS
µV
T
A
= -40°C to +85°C
4.23
Hysteresis
V
CSP
= 12V
V
CSP
= 4.8V
to 18V
V
CSP
= 12V
IMON Gain (Note 3)
G
IM
V
CSP
= 4.8V
to 18V
V
SYMBOL
V
CB_OPEN
V
IL
V
IH
CONDITIONS
Force ±4µA into unconnected CB pin; then
measure voltage on the CB pin
V
CB
rising
V
CB
falling, relative to V
S
MIN
1.0
0.4
V
S
- 0.2
TYP
MAX
V
S
- 1
UNITS
V
V
V
IMON Offset (Note 3)
I
MON_OS
T
A
= -40°C to +125°C
T
A
= -40°C to +125°C
T
A
= +25°C
T
A
= -40°C to +125°C
T
A
= -40°C to +125°C
V
CSP
= 12V, R
SENSE
= 3mΩ, I
LOAD
= 1A,
(V
CSP
- V
CSN)
= 3mV, T
A
= +25°C,
I
MON_ACCURACY
= ((I
IMON
- 9µA)/9µA) x
100
Current Monitoring Total
Accuracy (Note 4)
I
MON_
ACCURACY
-3
+3
V
CSP
= 12V, R
SENSE
= 3mΩ, I
LOAD
= 5A,
(V
CSP
- V
CSN)
= 15mV, T
A
= +25°C,
I
MON_ACCURACY
= ((I
IMON
- 45µA)/45µA)
x 100
V
CSP
= 12V, R
SENSE
= 3mΩ, I
LOAD
=
10A, (V
CSP
- V
CSN)
= 30mV, T
A
= +25°C,
I
MON_ACCURACY
= ((I
IMON
- 90µA)/90µA)
x 100
-0.9
+0.9
%
-0.6
102
30
1.8
2.25
2.4
+0.6
dB
mV
V
2.5
V
CMRR (Note 5)
Input Voltage Range
Output Voltage Range
IMON Voltage Clamp
I
MON_CMRR
(V
CSP
- V
CSN
)
MAX
VIMON
MAX
V
IMON_CLMP
V
CSP
= 4.8V to 18V
V
CSP
= 4.8V to 18V, -40°C ≤ T
A
≤ +125°C
V
CSP
= 4.8V to 18V, -40°C ≤ T
A
≤ +125°C
V
CSP
- V
CSN
≥ 36mV, V
CSP
= 4.8V to 18V,
-40°C ≤ T
A
≤ +125°C
Note 2:
All devices are 100% production tested at T
A
= +25°C. Limits over temperature are guaranteed by design.
Note 3:
Gain and offset are defined as IMON
1
= IMON with Vi
1
= (V
CSP
- V
CSN
) = 3mV, IMON
2
= IMON with Vi
2
= (V
CSP
- V
CSN
)
= 30mV, G
IM
= (IMON
2
- IMON
1
)/(Vi
2
- Vi
1
), I
MON_OS
= IMON
1
- G
IM
x Vi
1
.
Note 4:
Accuracy over the entire operating range can be determined combining the specified value of the related offset and gain in
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