IC ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20, Bus Driver/Transceiver
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | QCCN, LCC20,.35SQ |
| Reach Compliance Code | unknown |
| 控制类型 | ENABLE LOW |
| 系列 | ACT |
| JESD-30 代码 | S-CQCC-N20 |
| JESD-609代码 | e0 |
| 长度 | 8.89 mm |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | BUS DRIVER |
| 最大I（ol） | 0.024 A |
| 位数 | 4 |
| 功能数量 | 2 |
| 端口数量 | 2 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | 3-STATE |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装等效代码 | LCC20,.35SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 10 ns |
| 传播延迟（tpd） | 10 ns |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 1.905 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 总剂量 | 100k Rad(Si) V |
| 宽度 | 8.89 mm |
| Base Number Matches | 1 |
| 5962R8776001B2A | 54ACT244MDA | 5962R8776001BRA | 5962-8776001S2A | 5962R8776001BSA | |
|---|---|---|---|---|---|
| 描述 | IC ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20, Bus Driver/Transceiver | IC ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, UUC20, DIE, Bus Driver/Transceiver | IC ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDIP20, CERAMIC, DIP-20, Bus Driver/Transceiver | IC ACT SERIES, OCTAL 1-BIT DRIVER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20, Bus Driver/Transceiver | IC ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDFP20, CERAMIC, FP-20, Bus Driver/Transceiver |
| 包装说明 | QCCN, LCC20,.35SQ | DIE, | DIP, DIP20,.3 | QCCN, LCC20,.35SQ | DFP, FL20,.3 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown |
| 系列 | ACT | ACT | ACT | ACT | ACT |
| JESD-30 代码 | S-CQCC-N20 | R-XUUC-N20 | R-GDIP-T20 | S-CQCC-N20 | R-GDFP-F20 |
| 逻辑集成电路类型 | BUS DRIVER | BUS DRIVER | BUS DRIVER | BUS DRIVER | BUS DRIVER |
| 位数 | 4 | 4 | 4 | 1 | 4 |
| 功能数量 | 2 | 2 | 2 | 8 | 2 |
| 端口数量 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 输出极性 | TRUE | TRUE | TRUE | TRUE | TRUE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED |
| 封装代码 | QCCN | DIE | DIP | QCCN | DFP |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | CHIP CARRIER | UNCASED CHIP | IN-LINE | CHIP CARRIER | FLATPACK |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子形式 | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD | FLAT |
| 端子位置 | QUAD | UPPER | DUAL | QUAD | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 |
| 控制类型 | ENABLE LOW | - | ENABLE LOW | ENABLE LOW | ENABLE LOW |
| JESD-609代码 | e0 | - | e0 | e0 | e0 |
| 长度 | 8.89 mm | - | 24.51 mm | 8.89 mm | - |
| 负载电容（CL） | 50 pF | - | 50 pF | 50 pF | 50 pF |
| 最大I（ol） | 0.024 A | - | 0.024 A | 0.024 A | 0.024 A |
| 最高工作温度 | 125 °C | - | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | - | -55 °C | -55 °C | -55 °C |
| 封装等效代码 | LCC20,.35SQ | - | DIP20,.3 | LCC20,.35SQ | FL20,.3 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | - | 5 V | 5 V | 5 V |
| Prop。Delay @ Nom-Sup | 10 ns | - | 10 ns | 10 ns | 10 ns |
| 传播延迟（tpd） | 10 ns | - | 10 ns | 10 ns | 10 ns |
| 筛选级别 | MIL-STD-883 | - | MIL-STD-883 | MIL-PRF-38535 Class S | MIL-STD-883 |
| 座面最大高度 | 1.905 mm | - | 5.08 mm | 1.905 mm | 2.286 mm |
| 温度等级 | MILITARY | - | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped | - | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped |
| 端子节距 | 1.27 mm | - | 2.54 mm | 1.27 mm | 1.27 mm |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 总剂量 | 100k Rad(Si) V | - | 100k Rad(Si) V | - | 100k Rad(Si) V |
| 宽度 | 8.89 mm | - | 7.62 mm | 8.89 mm | 6.731 mm |
微控制器 MCU
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