Datasheet> 器件分类 > 分立半导体> 二极管> JANTXV1N6639US

JANTXV1N6639US: 产品描述Diodes - General Purpose, Power, Switching Switching; 产品类别分立半导体二极管; 文件大小41KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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JANTXV1N6639US概述

Diodes - General Purpose, Power, Switching Switching

JANTXV1N6639US规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Microsemi
包装说明	O-XELF-R2
针数	2
Reach Compliance Code	not_compliant
ECCN代码	EAR99
Is Samacsys	N
其他特性	METALLURGICALLY BONDED
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.2 V
JESD-30 代码	O-XELF-R2
JESD-609代码	e0
最大非重复峰值正向电流	2.5 A
元件数量	1
端子数量	2
最高工作温度	175 °C
最低工作温度	-65 °C
最大输出电流	0.3 A
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Qualified
参考标准	MIL-19500/609D
最大重复峰值反向电压	75 V
最大反向电流	0.1 µA
最大反向恢复时间	0.004 µs
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	WRAP AROUND
端子位置	END
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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• 1N6639US THRU 1N6641US AVAILABLE IN

JAN, JANTX, JANTXV

AND

JANS

PER MIL-PRF-19500/609

• SWITCHING DIODES

• NON-CAVITY GLASS PACKAGE

• METALLURGICALLY BONDED

1N6639US

1N6640US

1N6641US

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 300 mA

Derating: 4.6 mA/°C Above TEC = + 110°C

Surge Current: I

FSM

= 2.5A, Pw = 8.3ms

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise speci½ed.

V BRR

@ 10 µA

V RWM

I R1

I R2

@ TA = +25

°C

@ TA = +150

°C

VR =

V RWM

nA dc

100

µA dc

100

T FR

= 200 mA

T RR

I R = 10 mA

I F = 10 mA

RL = 100

4.0

5.0

VR = 0

DIM

MILLIMETERS

MIN

MAX

1.78

2.16

0.48

0.71

4.19

4.95

0.08MIN.

INCHES

MIN MAX

0.070 0.085

0.019 0.028

0.165 0.195

0.003MIN.

TYPES

FIGURE 1

2.5

3.0

V(pk)

1N6639US

1N6640US

1N6641US

100

V(pk)

DESIGN DATA

CASE:

D-5D, Hermetically sealed glass

case, per MIL-PRF- 19500/609

FORWARD VOLTAGE:

TYPES

MIN

1N6639US

–

0.54

1N6640US

0.76

0.82

0.87

1N6641US

–

VdC

MAX

1.20

0.62

0.86

0.92

1.00

1.10

(PULSED)

500

100

200

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC):

50 °C/W maximum at L = 0

THERMAL IMPEDANCE: (Z

OJX): 25

°C/W maximum

POLARITY:

Cathode end is banded

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) of this device is approximately

+ 4PPM / °C. The COE of the Mounting

Surface System should be selected to

provide a suitable match with this

device.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (781) 689-0803

WEBSITE: http://www.microsemi.com

159

JANTXV1N6639US相似产品对比

	JANTXV1N6639US	BLU0603A-2183-BT100W	BLU1206-2083-BB10	JAN1N6639US	1N6640US	GP65ER-2183-DB50W	RG1/4P-2084-DB50W	JANS1N6641US
描述	Diodes - General Purpose, Power, Switching Switching	Fixed Resistor, Thin Film, 0.1W, 218000ohm, 75V, 0.1% +/-Tol, 100ppm/Cel, 0603,	Fixed Resistor, Thin Film, 0.25W, 208000ohm, 150V, 0.1% +/-Tol, 10ppm/Cel, 1206,	Diodes - General Purpose, Power, Switching Switching	Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.22uF X7R 10%	Fixed Resistor, Metal Film, 1W, 218000ohm, 400V, 0.5% +/-Tol, 50ppm/Cel,	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 2080000ohm, 500V, 0.5% +/-Tol, 50ppm/Cel,	Diodes - General Purpose, Power, Switching Switching
Reach Compliance Code	not_compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
端子数量	2	2	2	2	2	2	2	2
封装形式	LONG FORM	SMT	SMT	LONG FORM	LONG FORM	Axial	Axial	LONG FORM
是否Rohs认证	不符合	符合	-	不符合	不符合	符合	符合	不符合
JESD-609代码	e0	e3	-	e0	e0	e3	e3	e0
最高工作温度	175 °C	155 °C	155 °C	-	175 °C	160 °C	155 °C	175 °C
最低工作温度	-65 °C	-55 °C	-	-	-65 °C	-55 °C	-55 °C	-65 °C
封装形状	ROUND	-	-	ROUND	ROUND	CYLINDRICAL PACKAGE	CYLINDRICAL PACKAGE	ROUND
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - with Nickel (Ni) barrier	-	Tin/Lead (Sn/Pb)	TIN LEAD	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)

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