MOSFET 25V 1 N-CH HEXFET 1.7mOhms 31nC
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | Infineon(英飞凌) |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | DirectFET-MX |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 200 A |
Rds On - Drain-Source Resistance | 3 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 31 nC |
Configuration | Single |
系列 Packaging | Reel |
系列 Packaging | Cut Tape |
高度 Height | 0.7 mm |
长度 Length | 6.35 mm |
Moisture Sensitive | Yes |
Pd-功率耗散 Pd - Power Dissipation | 100 W |
工厂包装数量 Factory Pack Quantity | 1000 |
Transistor Type | 1 N-Channel |
宽度 Width | 5.05 mm |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved