NVMFS4C05N
Power MOSFET
30 V, 127 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Notes 1, 2 and 4)
Power Dissipation
R
qJA
(Notes 1, 2
and 4)
Continuous Drain
Current R
qJC
(Notes 1, 2, 3
and 4)
Continuous Drain
Current R
qJC
(Notes 1, 2, 3
and 4)
Power Dissipation
R
qJC
(Notes 1, 2, 3
and 4)
Pulsed Drain
Current
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
P
D
T
C
= 25°C
Steady
State
T
C
= 80°C
I
D
101
A
127
I
D
Symbol
V
DSS
V
GS
Value
30
±20
27.2
21.6
3.61
W
Unit
V
V
A
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V
(BR)DSS
30 V
R
DS(ON)
MAX
2.8 mW @ 10 V
I
D
MAX
127 A
4.0 mW @ 4.5 V
D (5−8)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
W
S
S
S
G
D
4C05xx
AYWZZ
D
T
C
= 25°C
P
D
79
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
,
T
STG
I
S
E
AS
T
L
174
−55 to
+175
72
42
260
A
°C
A
mJ
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L
= 29 A
pk
, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
4C05N = Specific Device Code for
NVMFS4C05N
4C05WF= Specific Device Code of
NVMFS4C05NWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
1500 /
Tape & Reel
5000 /
Tape & Reel
°C
NVMFS4C05NT1G
NVMFS4C05NT3G
NVMFS4C05NWFT1G
NVMFS4C05NWFT3G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 650 mm
2
, 2 oz Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 2
Publication Order Number:
NVMFS4C05N/D
NVMFS4C05N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 5)
5. Surface−mounted on FR4 board using 650 mm
2
, 2 oz Cu pad.
Symbol
R
qJC
R
qJA
Value
1.9
41.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.77
0.62
40.2
20.3
19.9
30.2
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
11
32
21
7.0
8.0
26
26
5.0
ns
ns
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1972
1215
59
0.030
14
3.3
6.0
5.0
3.1
30
V
nC
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
R
G
V
GS
= 10 V
V
GS
= 4.5 V
T
A
= 25°C
I
D
= 30 A
I
D
= 30 A
0.3
V
GS
= V
DS
, I
D
= 250
mA
1.3
−5.1
2.3
3.3
68
1.0
2.0
2.8
4.0
2.2
V
mV/°C
mW
S
W
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
12
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
V
DS
= 1.5 V, I
D
= 15 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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NVMFS4C05N
TYPICAL CHARACTERISTICS
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
140
130 V
DS
= 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
10 V
4.5 V
4.2 V
4V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
I
D
, DRAIN CURRENT (A)
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
12
11
10
9
8
7
6
5
4
3
2
1
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
12
11
10
9
8
7
6
5
4
3
2
1
0
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
20
40
60
80
100
120
140
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.8
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
10
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFS4C05N
TYPICAL CHARACTERISTICS
3000
2750
2500
C, CAPACITANCE (pF)
2250
2000
1750
1500
1250
1000
750
500
250
0
C
rss
0
5
10
15
20
25
30
C
iss
C
oss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
Q
gs
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
4
8
12
16
20
24
28
32
4
2
0
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
20
18
t
d(off)
t
d(on)
t
r
t
f
10
16
14
12
10
8
6
4
2
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
I
D
, DRAIN CURRENT (A)
10
1
0.1
0.01
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
Figure 10. Diode Forward Voltage vs. Current
10
ms
100
ms
1 ms
10 ms
0.001
0.0001
dc
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NVMFS4C05N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10 20%
10%
5%
2%
1
1%
0.1
R(t) (°C/W)
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
120
100
80
G
FS
(S)
60
40
20
0
0
10
20
30
40
I
D
(A)
50
60
70
80
1000
I
D
, DRAIN CURRENT (A)
100
T
A
= 25°C
T
A
= 85°C
10
1
1.E−06
1.E−05
1.E−04
1.E−03
PULSE WIDTH (SECONDS)
Figure 13. G
FS
vs. I
D
Figure 14. Avalanche Characteristics
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