Ordering number:EN5579A
N-Channel Silicon MOSFET
FW211
DC-DC Converter Applications
Features
· Low ON resistance.
· 2.5V drive.
Package Dimensions
unit:mm
2129
[FW211]
8
5
0.3
4.4
6.0
0.2
5.0
0.595
1.27
0.43
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm
2
×0.8mm)
1unit
Mounted on a ceramic board (1000mm
×0.8mm)
2
0.1
1.5
1.8max
1
4
1:Source 1
2:Gate 1
3:Source 2
4:Gate 2
5:Drain 2
6:Drain 2
7:Drain 1
8:Drain 1
SANYO:SOP8
Conditions
Ratings
20
±10
6
52
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=5A, VGS=0
VDS=10V, VGS=10V, ID=1A
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
0.4
9
15
27
35
750
520
300
20
200
150
150
30
5
7
1.0
1.2
35
48
Conditions
Ratings
min
20
100
±10
1.3
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-0861 No.5579-1/3
FW211
Switching Time Test Circuit
4V
0V
VIN
VIN
PW=10µs
D.C.≤1%
VDD=10V
ID=5A
RL=2Ω
D
VOUT
G
FW211
P.G
50Ω
S
8
I
D
- V
DS
6V
4V
3V
2.5
V
2V
8V
10
9
8
I
D
- V
GS
V
DS
=10V
7
Drain Current, I
D
– A
Drain Current, I
D
– A
6
5
4
3
2
1
1.5V
7
6
5
25˚C
0.4
0.6
0.8
1.0
1.2
1.4
4
3
2
V
GS
=1V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
0
0
0.2
1.6
1.8
Drain-to-Source Voltage,V
DS
– V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.01
2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
Current, I
D
– A
2 3 5 7 100
Gate-to-Source Voltage, V
GS
– V
V
DS
=10V
60
| y
fs
| - I
D
Static Drain-to-Source
ON-State Resistance, R
DS (
on
)
– mΩ
R
DS(on)
- V
GS
Tc=25˚C
Forward Transfer Admittance,
|
y
fs
|
– S
50
Ta
2
=-
5˚C
˚C
75
˚C
25
I
D
=5A
40
2A
30
20
10
0
0
1
2
3
4
5
6
7
8
Ta =
9
- 25
˚C
10
0.9
1.0
Drain
80
Gate-to-Source Voltage, V
GS
– V
10
7
V
GS
=0
5
R
DS(on)
- Tc
I
F
- V
SD
Static Drain-to-Source
ON-State Resistance, R
DS (
on
)
– mΩ
70
60
50
40
30
20
10
0
-60
Forward Current, I
F
– A
3
2
1.0
7
5
3
2
,V
GS
I
D
=2A
=2.5V
25˚C
3
2
-40
-20
0
20
40
60
80
100
120
140
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Case Temperature, Tc – ˚C
Diode Forward Voltage, V
SD
– V
- 25˚C
I
D
=5A, V
G
S
=4V
0.1
7
5
Ta =7
5˚C
75˚C
No.5579-2/3
FW211
10000
7
5
Ciss,Coss,Crss - V
DS
f=1MHz
10
V
GS
- Qg
Gate-to-Source Voltage, V
GS
– V
V
DS
=10V
I
D
=1A
9
8
7
6
5
4
3
2
1
Ciss,Coss,Crss – pF
3
2
1000
7
5
3
2
100
0
Ciss
Coss
Crss
2
4
6
8
10
12
14
16
18
20
0
0
5
10
15
20
25
30
Drain-to-Source Voltage,V
DS
– V
1000
7
Total Gate Charge, Qg – nC
V
DD
=10V
V
GS
=4V
100
7
I
DP
= 5 2 A
5
3
2
SW Time - I
D
Switching Time, SW Time – ns
5
3
2
100
7
5
3
2
10
7 0.1
Drain Current, I
D
– A
tf
td
(of
f)
10
I =6A
7
D
5
3
2
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
DC
1pulse
A S O
10
µs
10
1m
10m
s
0
µ
s
tr
s
10
0m
s
1.0
Operation in this
7
area is limited
5
by R
DS
(on).
3
2
Ta= 25˚C
op
era
tio
n
t d(on)
2
3
5
7 1.0
2
3
5
7 10
2
0.1
1unit
7
Mounted ceramic board (1000mm
2
×
0.8mm)
5
2
3
5 7 10
2
3
5 7 1.0
2
3
Drain Current, I
D
– A
Drain-to-Source Voltage, V
DS
– V
2.5
Allowable Power Disipation, P
D
(FET2) – W
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
P
D
(FET2)
- P
D
(FET1)
Allowable Power Disipation, P
D
– W
P
D
-
Ta
M
ou
2.0
1.7
nte
d
ce
ram
ic
bo
1.5
ard
To
t
1u
(1
al
00
0m
Di
ss
m
2
×
0
1.0
.8m
nit
ip
ati
on
m)
0.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0
Mounted ceramic board (1000mm
2
×
0.8mm)
20
40
60
80
100
120
140
160
Allowable Power Disipation, P
D
(FET 1) – W
Ambient Temperature, Ta – ˚C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of June, 1998. Specifications and information herein are subject to
change without notice.
PS No.5579-3/3
嵌入式系统
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