| 器件名 |
厂商 |
描 述 |
功能 |
| SI4931DY |
Vishay(威世) |
Dual P-Channel 12-V (D-S) MOSFET |
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| SI4931DY_05 |
Vishay(威世) |
Dual P-Channel 12-V (D-S) MOSFET |
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| SI4931DY-E3 |
Vishay(威世) |
VISHAY SILICONIX - SI4931DY-T1-E3 - DUAL P CHANNEL MOSFET; -12V; SOIC; FULL REEL |
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| SI4931DY-T1 |
Vishay(威世) |
VISHAY SILICONIX - SI4931DY-T1-E3 - DUAL P CHANNEL MOSFET; -12V; SOIC; FULL REEL |
下载
|
| SI4931DY-T1-E3 |
Vishay(威世) |
漏源电压(Vdss):12V 连续漏极电流(Id)(25°C 时):6.7A 栅源极阈值电压:1V @ 350uA 漏源导通电阻:18mΩ @ 8.9A,4.5V 最大功率耗散(Ta=25°C):1.1W 类型:双P沟道 |
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| SI4931DY-T1-E3 |
台湾微碧(VBsemi) |
Dual P-Channel 20V (D-S) MOSFET |
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|
| SI4931DY-T1-GE3 |
Vishay(威世) |
漏源电压(Vdss):12V 连续漏极电流(Id)(25°C 时):6.7A 栅源极阈值电压:1V @ 350uA 漏源导通电阻:18mΩ @ 8.9A,4.5V 最大功率耗散(Ta=25°C):1.1W 类型:双P沟道 |
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|