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irfbc30

eeworld网站中关于irfbc30有126个元器件。有IRFBC30、IRFBC30等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
IRFBC30 ETC2 SEMICONDUCTORS 下载
IRFBC30 ST(意法半导体) N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET 下载
IRFBC30 International Rectifier ( Infineon ) Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) 下载
IRFBC30 Vishay(威世) MOSFET N-Chan 600V 3.6 Amp 下载
IRFBC30 Thomson Consumer Electronics Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 下载
IRFBC30 ISC iscN-Channel MOSFET Transistor 下载
IRFBC30-001 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 下载
IRFBC30-001 Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 下载
IRFBC30-001PBF Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 下载
IRFBC30-001PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 下载
IRFBC30-002 Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-002 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-002PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-002PBF Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRFBC30-003 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-004 Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-004 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-004PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-004PBF Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRFBC30-005 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-006 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-006 Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-006PBF Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRFBC30-006PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-007 Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-007 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-007PBF Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRFBC30-007PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-009 International Rectifier ( Infineon ) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRFBC30-009 Vishay(威世) Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
关于irfbc30相关文档资料:
对应元器件 pdf文档资料下载
IRFBC30-007 、 IRFBC30-007 、 IRFBC30-007PBF 、 IRFBC30-007PBF 下载文档
IRFBC30-001 、 IRFBC30-001 、 IRFBC30-001PBF 、 IRFBC30-001PBF 下载文档
IRFBC30ALPBF 、 IRFBC30ASTRLPBF 、 IRFBC30ASTRRPBF 下载文档
IRFBC30ASTRL 、 IRFBC30ASTRR 下载文档
IRFBC30ASTRL 、 IRFBC30ASTRLPBF 下载文档
IRFBC30AS 、 IRFBC30ASTRR 下载文档
IRFBC30ALPBF 、 IRFBC30ASPBF 下载文档
IRFBC30AL 、 IRFBC30ASTRRPBF 下载文档
IRFBC30LTRLPBF 、 IRFBC30LTRRPBF 下载文档
IRFBC30PBF 下载文档
irfbc30资料比对:
型号 IRFBC30-001 IRFBC30-001 IRFBC30-001PBF IRFBC30-001PBF
描述 Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
是否无铅 含铅 含铅 不含铅 不含铅
是否Rohs认证 不符合 不符合 符合 符合
厂商名称 Vishay(威世) International Rectifier ( Infineon ) International Rectifier ( Infineon ) Vishay(威世)
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant compliant compliant
外壳连接 DRAIN DRAIN DRAIN DRAIN
配置 SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 600 V 600 V 600 V 600 V
最大漏极电流 (ID) 3.6 A 3.6 A 3.6 A 3.6 A
最大漏源导通电阻 2.2 Ω 2.2 Ω 2.2 Ω 2.2 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1
端子数量 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED 225 250 NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 14 A 14 A 14 A 14 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 30 NOT SPECIFIED
晶体管元件材料 SILICON SILICON SILICON SILICON
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