| 器件名 |
厂商 |
描 述 |
功能 |
| IRFBC30 |
ETC2 |
SEMICONDUCTORS |
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| IRFBC30 |
ST(意法半导体) |
N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET |
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| IRFBC30 |
International Rectifier ( Infineon ) |
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) |
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| IRFBC30 |
Vishay(威世) |
MOSFET N-Chan 600V 3.6 Amp |
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| IRFBC30 |
Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| IRFBC30 |
ISC |
iscN-Channel MOSFET Transistor |
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| IRFBC30-001 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| IRFBC30-001 |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| IRFBC30-001PBF |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
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| IRFBC30-001PBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
下载
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| IRFBC30-002 |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-002 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| IRFBC30-002PBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-002PBF |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, |
下载
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| IRFBC30-003 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| IRFBC30-004 |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-004 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-004PBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
|
| IRFBC30-004PBF |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, |
下载
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| IRFBC30-005 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| IRFBC30-006 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-006 |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-006PBF |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, |
下载
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| IRFBC30-006PBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-007 |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-007 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
|
| IRFBC30-007PBF |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, |
下载
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| IRFBC30-007PBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-009 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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| IRFBC30-009 |
Vishay(威世) |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
下载
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