| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| VT6Z1T2R | ROHM(罗姆半导体) | Bipolar Transistors - BJT NPN/PNP | 下载 |
Bipolar Transistors - BJT NPN/PNP
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | ROHM(罗姆半导体) |
| 产品种类 Product Category | Bipolar Transistors - BJT |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | SMD/SMT |
| 封装 / 箱体 Package / Case | VMT-6 |
| Transistor Polarity | NPN, PNP |
| Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 20 V, - 20 V |
| Collector- Base Voltage VCBO | 20 V, - 20 V |
| Emitter- Base Voltage VEBO | 5 V, - 5 V |
| Collector-Emitter Saturation Voltage | 120 mV, - 120 mV |
| Maximum DC Collector Current | 400 mA, - 400 mA |
| Gain Bandwidth Product fT | 350 MHz, 400 MHz |
| 最大工作温度 Maximum Operating Temperature | + 150 C |
| DC Current Gain hFE Max | 560 at 1 mA at 2 V, 560 at - 1 mA at - 2 V |
| 系列 Packaging | Cut Tape |
| 系列 Packaging | MouseReel |
| 系列 Packaging | Reel |
| Continuous Collector Current | 200 mA, - 200 mA |
| DC Collector/Base Gain hfe Min | 120 |
| Pd-功率耗散 Pd - Power Dissipation | 150 mW |
| 工厂包装数量 Factory Pack Quantity | 8000 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved