| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| RN4910 | Toshiba(东芝) | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) | 下载 |
| RN4910FE | Toshiba(东芝) | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | 下载 |
| RN4910FE(TE85L) | Toshiba(东芝) | RN4910FE(TE85L) | 下载 |
| RN4910FE(TE85L,F) | Toshiba(东芝) | tran dual pnp/npn 50v 100ma es6 | 下载 |
| RN4910FE(TPL3,F) | Toshiba(东芝) | PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP | 下载 |
| RN4910,LF | Toshiba(东芝) | TRANS NPN/PNP PREBIAS 0.2W US6 | 下载 |
| RN4910LF | Toshiba(东芝) | Bipolar Transistors - Pre-Biased US6-PLN | 下载 |
| RN4910LFCT | Toshiba(东芝) | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | 下载 |
| RN4910,LF(CT | Toshiba(东芝) | trans prebias npn/pnp 50v us6 | 下载 |
| RN4910(T5L,F,T) | Toshiba(东芝) | TRANS NPN/PNP PREBIAS 0.2W US6 | 下载 |
| RN4910TE85L | Toshiba(东芝) | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 下载 |
| RN4910(TE85L) | Toshiba(东芝) | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal | 下载 |
| RN4910(TE85L,F) | Toshiba(东芝) | PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP | 下载 |
| RN4910TE85N | Toshiba(东芝) | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 下载 |
| RN4910(TE85R) | Toshiba(东芝) | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal | 下载 |
| RN4910TE85R | Toshiba(东芝) | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| RN4910(TE85L) 、 RN4910(TE85R) 、 RN4910TE85L 、 RN4910TE85N 、 RN4910TE85R | 下载文档 |
| RN4910LF 、 RN4910LFCT | 下载文档 |
| RN4910FE(TE85L) 、 RN4910FE(TPL3,F) | 下载文档 |
| RN4910(T5L,F,T) 、 RN4910,LF | 下载文档 |
| RN4910FE(TE85L,F) | 下载文档 |
| RN4910,LF(CT | 下载文档 |
| RN4910(TE85L,F) | 下载文档 |
| RN4910 | 下载文档 |
| RN4910FE | 下载文档 |
| 型号 | RN4910TE85R | RN4910(TE85L) | RN4910(TE85R) | RN4910TE85L | RN4910TE85N |
|---|---|---|---|---|---|
| 描述 | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| 厂商名称 | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 120 | 120 | 120 | 120 | 120 |
| JESD-30 代码 | R-PDSO-G6 | R-PDSO-G6 | R-PDSO-G6 | R-PDSO-G6 | R-PDSO-G6 |
| 元件数量 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 | 6 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN AND PNP | NPN AND PNP | NPN AND PNP | NPN AND PNP | NPN AND PNP |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| 基于收集器的最大容量 | 6 pF | - | - | 6 pF | 6 pF |
| 最高工作温度 | 150 °C | - | - | 150 °C | 150 °C |
| VCEsat-Max | 0.3 V | - | - | 0.3 V | 0.3 V |
| 包装说明 | - | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 |
| ECCN代码 | - | EAR99 | EAR99 | - | EAR99 |
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