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RN4910TE85L: 产品描述TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小286KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN4910TE85L概述

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN4910TE85L规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	6 pF
集电极-发射极最大电压	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120
JESD-30 代码	R-PDSO-G6
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN AND PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
VCEsat-Max	0.3 V

RN4910TE85L文档预览

RN4910

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4910

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Unit: mm

Equivalent Circuit and Bias Resister Values

R1: 4.7kΩ

(Q1, Q2 Common)

Q1 Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

CBO

CEO

EBO

Rating

−50

−5

−100

Unit

JEDEC

―

JEITA

―

TOSHIBA

2-2J1A

Weight: 6.8mg (typ.)

Q2 Absolute Maximum Rating Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

CBO

CEO

EBO

Rating

100

Unit

2007-11-01

RN4910

Q1, Q2 Common Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

stg

Rating

200

150

−55~150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Marking

Equivalent Circuit

(Top View)

2007-11-01

RN4910

Q1 Electrical Characteristics

(Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

CBO

EBO

CE (sat)

Test

Circuit

―

Test Condition

−50V,

= 0

−5V,

= 0

−5V,

−1mA

−5mA,

−0.25mA

−10V,

−5mA

−10V,

= 0, f = 1MHz

Min

―

120

―

Typ.

―

−0.1

200

Max

−100

400

−0.3

―

Unit

―

MHz

Q2 Electrical Characteristics

(Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

CBO

EBO

CE (sat)

Test

Circuit

―

Test Condition

= 50V, I

= 0

= 5V, I

= 0

= 5V, I

= 1mA

= 5mA, I

= 0.25mA

= 10V, I

= 5mA

= 10V, I

= 0, f = 1 MHz

Min

―

120

―

Typ.

―

0.1

250

Max

100

700

0.3

―

Unit

―

MHz

Q1, Q2 Common Electrical Characteristics

(Ta = 25°C)

Characteristic

Input resistor

Symbol

Test

Circuit

―

Test Condition

―

Min

3.29

Typ.

4.7

Max

6.11

Unit

kΩ

2007-11-01

RN4910

2007-11-01

RN4910

2007-11-01

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RN4910TE85L相似产品对比

	RN4910TE85L	RN4910(TE85L)	RN4910TE85N	RN4910(TE85R)	RN4910TE85R
描述	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120	120	120	120	120
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	2	2	2	2	2
端子数量	6	6	6	6	6
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
包装说明	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	-
基于收集器的最大容量	6 pF	-	6 pF	-	6 pF
最高工作温度	150 °C	-	150 °C	-	150 °C
VCEsat-Max	0.3 V	-	0.3 V	-	0.3 V
ECCN代码	-	EAR99	EAR99	EAR99	-

RN4910TE85L

RN4910TE85L概述

RN4910TE85L规格参数

RN4910TE85L文档预览

RN4910TE85L相似产品对比

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