器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
P2800 | Zarlink Semiconductor (Microsemi) | Content Addressable SRAM, 2KX64, CMOS, PQFP208 | 下载 |
P2800 | Dynex | Content Addressable SRAM, 2KX64, CMOS, PQFP208, | 下载 |
P2803HVG | 旭康(U-NIK) | N-Channel Enhancement Mode MOSFET | 下载 |
P2803NVG | - | N- & P-Channel Enhancement Mode Field Effect Transistor | 下载 |
P2803NVG | ETC2 | N- & P-Channel Enhancement Mode Field Effect Transistor | 下载 |
P2803NVG | NIKO-SEM(尼克森) | 漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):6A,7A 栅源极阈值电压:2.5V @ 250uA 漏源导通电阻:27.5mΩ @ 7A,10V;34mΩ @ 6A,10V 最大功率耗散(Ta=25°C):2W 类型:N沟道和P沟道 N沟道 30V 7A P沟道 -30V -6A MOS管阵列 | 下载 |
P2803NVG | 台湾微碧(VBsemi) | N- and P-Channel 30 V (D-S) MOSFET | 下载 |
P2804BDG | - | N-Channel Logic Level Enhancement | 下载 |
P2804BDG | ETC2 | N-Channel Logic Level Enhancement | 下载 |
P2804BVG | - | N-Channel Logic Level Enhancement Mode Field Effect Transistor | 下载 |
P2804BVG | ETC2 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | 下载 |
P2804BVG | 台湾微碧(VBsemi) | N-Channel 40-V (D-S) MOSFET | 下载 |
P2804HVG | - | Dual N-Channel Enhancement Mode Field Effect Transistor | 下载 |
P2804HVG | ETC2 | Dual N-Channel Enhancement Mode Field Effect Transistor | 下载 |
P2804HVG | 台湾微碧(VBsemi) | Dual N-Channel 60 V (D-S) 175 °C MOSFET | 下载 |
P2804ND5G | - | N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary | 下载 |
P2804ND5G | ETC2 | N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary | 下载 |
P2804ND5G | NIKO-SEM(尼克森) | 漏源电压(Vdss):40V 连续漏极电流(Id)(25°C 时):16A,21A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:28mΩ @ 7A,10V;48mΩ @ 5.5A,10V 最大功率耗散(Ta=25°C):21W 类型:N沟道和P沟道 N沟道 40V 21A P沟道 -40V -16A MOS管阵列 | 下载 |
P2804NVG | - | N- & P-Channel Enhancement Mode Field Effect Transistor | 下载 |
P2804NVG | ETC2 | N- & P-Channel Enhancement Mode Field Effect Transistor | 下载 |
P2804NVG | NIKO-SEM(尼克森) | 漏源电压(Vdss):40V 连续漏极电流(Id)(25°C 时):6A,7A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:65mΩ @ 5A,10V;28mΩ @ 7A,10V 最大功率耗散(Ta=25°C):2W 类型:N沟道和P沟道 N沟道 40V 7A P沟道 -40V -6A MOS管阵列 | 下载 |
P2804NVG | 台湾微碧(VBsemi) | N- and P-Channel 60-V (D-S) MOSFET | 下载 |
P2808 | Diodes | 5W HIGH POWER HBLED DRIVER | 下载 |
P280CH02CJ | IXYS | Silicon Controlled Rectifier, 1720 A, 200 V, SCR | 下载 |
P280CH02CJ0 | IXYS | Silicon Controlled Rectifier, 1385000mA I(T), 200V V(DRM) | 下载 |
P280CH02CJO | IXYS | Silicon Controlled Rectifier, 1720 A, 200 V, SCR | 下载 |
P280CH02CKO | IXYS | Silicon Controlled Rectifier, 1720A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | 下载 |
P280CH02CLO | IXYS | Silicon Controlled Rectifier, 1720 A, 200 V, SCR | 下载 |
P280CH02CMO | IXYS | Silicon Controlled Rectifier, 1720A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | 下载 |
P280CH02CNO | IXYS | Silicon Controlled Rectifier, 1720 A, 200 V, SCR | 下载 |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved