| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| NDS335N | Fairchild | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 下载 |
| NDS335N | ON Semiconductor(安森美) | MOSFET N-Ch LL FET Enhancement Mode | 下载 |
| NDS335N | Texas Instruments(德州仪器) | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 下载 |
| NDS335N/D87Z | Texas Instruments(德州仪器) | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 下载 |
| NDS335ND87Z | Fairchild | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | 下载 |
| NDS335N_D87Z | Fairchild | MOSFET N-Ch LL FET Enhancement Mode | 下载 |
| NDS335N/L99Z | Texas Instruments(德州仪器) | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 下载 |
| NDS335NL99Z | Fairchild | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | 下载 |
| NDS335N_NL | Fairchild | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | 下载 |
| NDS335N_Q | Fairchild | MOSFET N-Ch LL FET Enhancement Mode | 下载 |
| NDS335N/S62Z | Texas Instruments(德州仪器) | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 下载 |
| NDS335NS62Z | Fairchild | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| NDS335N/D87Z 、 NDS335N/L99Z 、 NDS335N/S62Z | 下载文档 |
| NDS335NL99Z 、 NDS335NS62Z | 下载文档 |
| NDS335N_Q | 下载文档 |
| NDS335ND87Z | 下载文档 |
| NDS335N_NL | 下载文档 |
| NDS335N_D87Z | 下载文档 |
| NDS335N | 下载文档 |
| NDS335N | 下载文档 |
| NDS335N | 下载文档 |
| 型号 | NDS335N/D87Z | NDS335N/L99Z | NDS335N/S62Z |
|---|---|---|---|
| 描述 | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V | 20 V | 20 V |
| 最大漏极电流 (ID) | 1.7 A | 1.7 A | 1.7 A |
| 最大漏源导通电阻 | 0.14 Ω | 0.14 Ω | 0.14 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 0.46 W | 0.46 W | 0.46 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
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