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MTP12N50

eeworld网站中关于MTP12N50有94个元器件。有MTP12N05、MTP12N05等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
MTP12N05 Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05 NXP(恩智浦) TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,12A I(D),TO-220AB 下载
MTP12N05E Motorola ( NXP ) POWER FIELD EFFECT TRANSISTOR 下载
MTP12N05E Texas Instruments(德州仪器) 12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN 下载
MTP12N05E16 Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EA Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EA16A Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EAF Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EAJ Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EC Motorola ( NXP ) 12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
MTP12N05ED1 Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EL Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EN Motorola ( NXP ) 12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
MTP12N05ES Motorola ( NXP ) 12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
MTP12N05ET Motorola ( NXP ) 12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
MTP12N05EU Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EU2 Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EUA Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N05EW Motorola ( NXP ) 12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
MTP12N05EWC Motorola ( NXP ) Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
MTP12N06 Motorola ( NXP ) TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM 下载
MTP12N06 NXP(恩智浦) TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-220AB 下载
MTP12N06EZL Motorola ( NXP ) TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM 下载
MTP12N06EZL ON Semiconductor(安森美) 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN 下载
MTP12N06EZL NXP(恩智浦) TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,12A I(D),TO-220AB 下载
MTP12N08 NXP(恩智浦) TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,12A I(D),TO-220AB 下载
MTP12N08 Motorola ( NXP ) 12A, 80V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
MTP12N08L New Jersey Semiconductor Power Field Effect Transistor 下载
MTP12N10 Motorola ( NXP ) 12A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
MTP12N10 NXP(恩智浦) TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,12A I(D),TO-220AB 下载
关于MTP12N50相关文档资料:
对应元器件 pdf文档资料下载
MTP12N08 、 MTP12N10 下载文档
MTP12N08 、 MTP12N10 下载文档
MTP12N08L 、 MTP12N10L 下载文档
MTP12N18 、 MTP12N20 下载文档
MTP12N18 、 MTP12N20 下载文档
MTP12N18 、 MTP12N20 下载文档
MTP12N05 、 MTP12N06 下载文档
MTP12N06 、 MTP12N06EZL 下载文档
MTP12N18 、 MTP12N20 下载文档
MTP12N10L 下载文档
MTP12N50资料比对:
型号 MTP12N18 MTP12N20
描述 9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA 9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
是否Rohs认证 不符合 不符合
厂商名称 Fairchild Fairchild
包装说明 , ,
Reach Compliance Code compli compli
配置 Single Single
最大漏极电流 (Abs) (ID) 12 A 12 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609代码 e0 e0
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
极性/信道类型 N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 100 W 100 W
表面贴装 NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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