器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
MMBT2222A | Leiditech | Epitaxial planar die construction | 下载 |
MMBT2222A | Microsemi | Small Signal Bipolar Transistor, 0.01A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, | 下载 |
MMBT2222A_05 | 强茂(PANJIT) | NPN GENERAL PURPOSE SWITCHING TRANSISTOR | 下载 |
MMBT2222A_08 | Diodes | DIODES INC. - MMBT2222A-7-F - TRANSISTOR; NPN; 40V; 600mA; 300mW; SOT-23 | 下载 |
MMBT2222A_1 | Diodes | DIODES INC. - MMBT2222A-7-F - TRANSISTOR; NPN; 40V; 600mA; 300mW; SOT-23 | 下载 |
MMBT2222A_1 | DIOTEC | SMD General Purpose NPN Transistors | 下载 |
MMBT2222A_10 | MCC | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 | 下载 |
MMBT2222A_11 | MCC | NPN General Purpose Amplifier | 下载 |
MMBT2222A_11 | UNISONIC TECHNOLOGIES CO.,LTD | NPN GENERAL PURPOSE AMPLIFIER | 下载 |
MMBT2222A-13 | Diodes Incorporated | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, PLASTIC PACKAGE-3 | 下载 |
MMBT2222A_13 | MCC | NPN General Purpose Amplifier | 下载 |
MMBT2222A-13-F | Diodes Incorporated | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3 | 下载 |
MMBT2222A-13-F | Diodes | 40V NPN SMALL SIGNAL TRANSISTOR | 下载 |
MMBT2222A_15 | KEXIN | NPN T r ansistors | 下载 |
MMBT2222A_15 | SECOS | General Purpose Transistor | 下载 |
MMBT2222A_15 | Diodes | 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 | 下载 |
MMBT2222A_15 | Taiwan Semiconductor | 300mW, NPN Small Signal Transistor | 下载 |
MMBT2222A_15 | BILIN | NPN General Purpose Amplifier | 下载 |
MMBT2222A_16 | Diodes | 40V NPN SMALL SIGNAL TRANSISTOR | 下载 |
MMBT2222A_18 | DIOTEC | SMD General Purpose NPN Transistors | 下载 |
MMBT2222A-1P | 深圳辰达行电子(MDD) | 额定功率:300mW 集电极电流Ic:600mA 集射极击穿电压Vce:40V 晶体管类型:NPN | 下载 |
MMBT2222A 1P | 创基(CBI) | 晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):600mA 功率(Pd):250mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@150mA,15mA 直流电流增益(hFE@Ic,Vce):100@150mA,10V 特征频率(fT):300MHz 工作温度:+150℃@(Tj) 1P(1P表示丝印) | 下载 |
MMBT2222A 1P | 长电科技(JCET) | —— | 下载 |
MMBT2222A 1P | 富信半导体(FOSAN) | —— | 下载 |
MMBT2222A,215 | NXP(恩智浦) | NPN switching transistor | 下载 |
MMBT2222A215 | NXP(恩智浦) | Headers u0026 Wire Housings 14P STRT SOLDER TAIL HIGH TEMP | 下载 |
MMBT2222A,215 | Nexperia | 额定功率:250mW 集电极电流Ic:600mA 集射极击穿电压Vce:40V 晶体管类型:NPN | 下载 |
MMBT2222A,215 | Diodes Incorporated | MMBT2222A - NPN switching transistor TO-236 3-Pin | 下载 |
MMBT2222A-3_15 | KEXIN | NPN T r ansistors | 下载 |
MMBT2222A-7 | Diodes | Bipolar Transistors - BJT 40V 300mW | 下载 |
对应元器件 | pdf文档资料下载 |
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MMBT200/D87Z 、 MMBT200/L99Z 、 MMBT200/S62Z 、 MMBT200A/D87Z 、 MMBT200A/L99Z 、 MMBT200A/S62Z | 下载文档 |
MMBT2218A 、 MMBT2219A 、 MMBT2219A 、 MMBT2221A | 下载文档 |
MMBT200AD87Z 、 MMBT200D87Z 、 MMBT200D87Z | 下载文档 |
MMBT2131T1 、 MMBT2131T1 、 MMBT2131T3 | 下载文档 |
MMBT2132T1 、 MMBT2132T3 | 下载文档 |
MMBT200AL99Z 、 MMBT200AS62Z | 下载文档 |
MMBT2222 、 MMBT2222 | 下载文档 |
MMBT200L99Z 、 MMBT200S62Z | 下载文档 |
MMBT200_Q 、 MMBT200A | 下载文档 |
MMBT2132T3_06 、 MMBT2132T3G | 下载文档 |
型号 | MMBT200/D87Z | MMBT200/L99Z | MMBT200/S62Z | MMBT200A/D87Z | MMBT200A/L99Z | MMBT200A/S62Z |
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描述 | 500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
最大集电极电流 (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
基于收集器的最大容量 | 6 pF | 6 pF | 6 pF | 6 pF | 6 pF | 6 pF |
集电极-发射极最大电压 | 45 V | 45 V | 45 V | 45 V | 45 V | 45 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 100 | 100 | 100 | 300 | 300 | 300 |
JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
VCEsat-Max | 0.2 V | 0.2 V | 0.2 V | 0.2 V | 0.2 V | 0.2 V |
厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | - | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
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