| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| MJB44H11T4G | ON Semiconductor(安森美) | 额定功率:2W 集电极电流Ic:10A 集射极击穿电压Vce:80V 晶体管类型:NPN | 下载 |
| MJB44H11T4G | Amphenol(安费诺) | Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt, D2PAK 2 LEAD, 800-REEL | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| MJB44H11T4G 、 MJB44H11T4G | 下载文档 |
| 型号 | MJB44H11T4G | MJB44H11T4G |
|---|---|---|
| 描述 | Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt, D2PAK 2 LEAD, 800-REEL | 额定功率:2W 集电极电流Ic:10A 集射极击穿电压Vce:80V 晶体管类型:NPN |
| Brand Name | ON Semiconductor | ON Semiconductor |
| 是否无铅 | 不含铅 | 不含铅 |
| 厂商名称 | Amphenol(安费诺) | ON Semiconductor(安森美) |
| 包装说明 | LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3 | LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3 |
| 针数 | 3 | 3 |
| 制造商包装代码 | 418B-04 | 418B-04 |
| Reach Compliance Code | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 |
| Factory Lead Time | 6 weeks | 6 weeks |
| Is Samacsys | N | N |
| 外壳连接 | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 10 A | 10 A |
| 集电极-发射极最大电压 | 80 V | 80 V |
| 配置 | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 40 | 40 |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 2 |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 | 260 |
| 极性/信道类型 | NPN | NPN |
| 最大功率耗散 (Abs) | 50 W | 50 W |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子面层 | Tin (Sn) | Tin (Sn) |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 40 | 40 |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| 标称过渡频率 (fT) | 50 MHz | 50 MHz |
| Base Number Matches | 1 | 1 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved