| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| IRFZ24S | International Rectifier ( Infineon ) | HEXFET Power MOSFET | 下载 |
| IRFZ24S | Vishay(威世) | MOSFET N-Chan 60V 17 Amp | 下载 |
| IRFZ24SPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | 下载 |
| IRFZ24SPBF | Vishay(威世) | MOSFET 60V 100mOhm@10V 17A N-Ch | 下载 |
| IRFZ24STRL | Vishay(威世) | MOSFET N-Chan 60V 17 Amp | 下载 |
| IRFZ24STRL | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | 下载 |
| IRFZ24STRLPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | 下载 |
| IRFZ24STRLPBF | Vishay(威世) | MOSFET 60V 17A 60W | 下载 |
| IRFZ24STRR | Vishay(威世) | MOSFET N-CH 60V 17A D2PAK | 下载 |
| IRFZ24STRR | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | 下载 |
| IRFZ24STRRPBF | Vishay(威世) | MOSFET MOSFET N-Channel 60V | 下载 |
| IRFZ24STRRPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | 下载 |
| IRFZ24S_V01 | Vishay(威世) | Power MOSFET | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| IRFZ24SPBF 、 IRFZ24STRL 、 IRFZ24STRRPBF | 下载文档 |
| IRFZ24STRL 、 IRFZ24STRR | 下载文档 |
| IRFZ24S 、 IRFZ24STRLPBF | 下载文档 |
| IRFZ24STRLPBF 、 IRFZ24STRRPBF | 下载文档 |
| IRFZ24STRR | 下载文档 |
| IRFZ24SPBF | 下载文档 |
| IRFZ24S | 下载文档 |
| 型号 | IRFZ24SPBF | IRFZ24STRL | IRFZ24STRRPBF |
|---|---|---|---|
| 描述 | MOSFET 60V 100mOhm@10V 17A N-Ch | MOSFET N-Chan 60V 17 Amp | MOSFET MOSFET N-Channel 60V |
| 是否Rohs认证 | 符合 | 不符合 | 符合 |
| 零件包装代码 | D2PAK | D2PAK | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 4 | 4 | 4 |
| Reach Compliance Code | unknown | unknown | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 17 A | 17 A | 17 A |
| 最大漏源导通电阻 | 0.1 Ω | 0.1 Ω | 0.1 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | NOT SPECIFIED | 30 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 是否无铅 | 不含铅 | - | 不含铅 |
| Factory Lead Time | 6 weeks | - | 10 weeks |
| 最大漏极电流 (Abs) (ID) | 17 A | 17 A | - |
| 湿度敏感等级 | 1 | - | 3 |
| 最高工作温度 | 175 °C | 175 °C | - |
| 最大功率耗散 (Abs) | 60 W | 60 W | - |
| Base Number Matches | 1 | 1 | - |
| 厂商名称 | - | Vishay(威世) | Vishay(威世) |
| 雪崩能效等级(Eas) | - | 100 mJ | 100 mJ |
| 最大脉冲漏极电流 (IDM) | - | 68 A | 68 A |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved