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IRF9530N

eeworld网站中关于IRF9530N有96个元器件。有IRF9530N、IRF9530N等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
IRF9530N International Rectifier ( Infineon ) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) 下载
IRF9530N Kersemi Electronic Advanced Process Technology 下载
IRF9530N ISC P-Channel MOSFET Transistor 下载
IRF9530N-002 Infineon(英飞凌) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF9530N-002 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-002PBF Infineon(英飞凌) 13A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF9530N-002PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-003 Infineon(英飞凌) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF9530N-003 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-004 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-004 Infineon(英飞凌) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF9530N-004PBF Infineon(英飞凌) 13A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF9530N-004PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-005 Infineon(英飞凌) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF9530N-005 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-005PBF Infineon(英飞凌) 13A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF9530N-005PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-006 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-006 Infineon(英飞凌) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF9530N-006PBF Infineon(英飞凌) 13A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF9530N-006PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-009 Infineon(英飞凌) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF9530N-009 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-009PBF Infineon(英飞凌) 13A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF9530N-009PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-010 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-010 Infineon(英飞凌) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF9530N-010PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF9530N-010PBF Infineon(英飞凌) 13A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF9530N-011 International Rectifier ( Infineon ) Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
关于IRF9530N相关文档资料:
对应元器件 pdf文档资料下载
IRF9530NLPBF 、 IRF9530NS 、 IRF9530NSTRLPBF 、 IRF9530NSTRLPBF 下载文档
IRF9530NL 、 IRF9530NS 、 IRF9530NSTRR 下载文档
IRF9530NLPBF 、 IRF9530NSPBF 下载文档
IRF9530NSPBF 、 IRF9530NSTRRPBF 下载文档
IRF9530NPBF 、 IRF9530NPBF_15 下载文档
IRF9530NL 、 IRF9530NSTRR 下载文档
IRF9530NSTRLPBF 下载文档
IRF9530NSTRRPBF 下载文档
IRF9530NSPBF_15 下载文档
IRF9530NSTRL 下载文档
IRF9530N资料比对:
型号 IRF9530NLPBF IRF9530NS IRF9530NSTRLPBF IRF9530NSTRLPBF
描述 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) 漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):14A(Tc) 栅源极阈值电压:4V @ 250uA 漏源导通电阻:200mΩ @ 8.4A,10V 最大功率耗散(Ta=25°C):79W(Tc) 类型:P沟道 P沟道,-100V,-14A 漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):14A(Tc) 栅源极阈值电压:4V @ 250uA 漏源导通电阻:200mΩ @ 8.4A,10V 最大功率耗散(Ta=25°C):79W(Tc) 类型:P沟道 P沟道,-100V -14A
包装说明 IN-LINE, R-PSIP-T3 PLASTIC, D2PAK-3 - LEAD FREE, PLASTIC, D2PAK-3
Reach Compliance Code unknown unknown - not_compliant
ECCN代码 EAR99 EAR99 - EAR99
其他特性 AVALANCHE RATED AVALANCHE RATED, HIGH RELIABILITY - AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas) 250 mJ 250 mJ - 250 mJ
外壳连接 DRAIN DRAIN - DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 100 V 100 V - 100 V
最大漏极电流 (ID) 14 A 14 A - 14 A
最大漏源导通电阻 0.2 Ω 0.2 Ω - 0.2 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSIP-T3 R-PSSO-G2 - R-PSSO-G2
元件数量 1 1 - 1
端子数量 3 2 - 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE - SMALL OUTLINE
极性/信道类型 P-CHANNEL P-CHANNEL - P-CHANNEL
最大脉冲漏极电流 (IDM) 56 A 56 A - 56 A
表面贴装 NO YES - YES
端子形式 THROUGH-HOLE GULL WING - GULL WING
端子位置 SINGLE SINGLE - SINGLE
晶体管应用 SWITCHING SWITCHING - SWITCHING
晶体管元件材料 SILICON SILICON - SILICON
Base Number Matches 1 1 - 1
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