| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| HUF75545P3 | Fairchild | 75 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| HUF75545P3 | Intersil ( Renesas ) | 75 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| HUF75545P3 | ON Semiconductor(安森美) | 漏源电压(Vdss):80V 连续漏极电流(Id)(25°C 时):75A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:10mΩ @ 75A,10V 最大功率耗散(Ta=25°C):270W 类型:N沟道 | 下载 |
| HUF75545P3 | Rochester Electronics | 75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | 下载 |
| HUF75545P3 | Renesas(瑞萨电子) | 75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| HUF75545P3_NL | Rochester Electronics | 75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | 下载 |
| HUF75545P3_NL | Fairchild | Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | 下载 |
| HUF75545P3_Q | Fairchild | MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| HUF75545P3 、 HUF75545P3_NL | 下载文档 |
| HUF75545P3_NL | 下载文档 |
| HUF75545P3_Q | 下载文档 |
| HUF75545P3 | 下载文档 |
| HUF75545P3 | 下载文档 |
| HUF75545P3 | 下载文档 |
| HUF75545P3 | 下载文档 |
| 型号 | HUF75545P3 | HUF75545P3_NL |
|---|---|---|
| 描述 | 75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | 75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN |
| 是否无铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 |
| 零件包装代码 | TO-220AB | TO-220AB |
| 包装说明 | TO-220AB, 3 PIN | TO-220AB, 3 PIN |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 80 V | 80 V |
| 最大漏极电流 (ID) | 75 A | 75 A |
| 最大漏源导通电阻 | 0.01 Ω | 0.01 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e3 | e3 |
| 湿度敏感等级 | NOT APPLICABLE | NOT SPECIFIED |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度(摄氏度) | NOT APPLICABLE | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 认证状态 | COMMERCIAL | COMMERCIAL |
| 表面贴装 | NO | NO |
| 端子面层 | MATTE TIN | TIN |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT APPLICABLE | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved