| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| BUZ32 | Infineon(英飞凌) | MOSFET N-Ch 200V 9.5A TO220-3 | 下载 |
| BUZ32 | ST(意法半导体) | 11A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 下载 |
| BUZ32 | Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
| BUZ32 | Harris | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
| BUZ32 | SIEMENS | POWER, FET | 下载 |
| BUZ32 | Intersil ( Renesas ) | POWER, FET | 下载 |
| BUZ32 | Rochester Electronics | 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| BUZ32 | Renesas(瑞萨电子) | 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| BUZ32 | TT Electronics plc | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 下载 |
| BUZ32 | SEMELAB | 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET | 下载 |
| BUZ323 | Rochester Electronics | 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA | 下载 |
| BUZ323 | SIEMENS | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | 下载 |
| BUZ323 | Infineon(英飞凌) | SIPMOS Power Transistor | 下载 |
| BUZ323 | ISC | isc N-Channel MOSFET Transistor | 下载 |
| BUZ325 | Rochester Electronics | 12.5A, 400V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | 下载 |
| BUZ325 | Infineon(英飞凌) | SIPMOS Power Transistor | 下载 |
| BUZ325 | SIEMENS | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | 下载 |
| BUZ325 | ISC | Easy driver for cost effective application | 下载 |
| BUZ326 | Infineon(英飞凌) | Power Field-Effect Transistor, 10.5A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 下载 |
| BUZ326 | SIEMENS | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | 下载 |
| BUZ326 | North American Philips Discrete Products Div | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
| BUZ32CHIP | ST(意法半导体) | 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET | 下载 |
| BUZ32-E3044 | Infineon(英飞凌) | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | 下载 |
| BUZ32-E3044 | SIEMENS | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | 下载 |
| BUZ32-E3045 | Infineon(英飞凌) | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | 下载 |
| BUZ32-E3045 | SIEMENS | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | 下载 |
| BUZ32 E3045A | Infineon(英飞凌) | mosfet N-CH 200v 9.5A d2pak | 下载 |
| BUZ32-E3046 | Infineon(英飞凌) | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | 下载 |
| BUZ32-E3046 | SIEMENS | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | 下载 |
| BUZ32-H | Infineon(英飞凌) | MOSFET N-Ch 200V 9.5A TO220-3 | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| BUZ32-E3044 、 BUZ32-E3044 、 BUZ32-E3045 、 BUZ32-E3045 、 BUZ32-E3046 、 BUZ32-E3046 | 下载文档 |
| BUZ32 L3045A 、 BUZ32-H 、 BUZ32-H3045A | 下载文档 |
| BUZ32 E3045A 、 BUZ32L3045A | 下载文档 |
| BUZ326 | 下载文档 |
| BUZ325 | 下载文档 |
| BUZ325 | 下载文档 |
| BUZ326 | 下载文档 |
| BUZ325 | 下载文档 |
| BUZ326 | 下载文档 |
| BUZ32H3045AATMA1 | 下载文档 |
| 型号 | BUZ32-E3044 | BUZ32-E3044 | BUZ32-E3045 | BUZ32-E3045 | BUZ32-E3046 | BUZ32-E3046 |
|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN |
| 厂商名称 | Infineon(英飞凌) | SIEMENS | Infineon(英飞凌) | SIEMENS | Infineon(英飞凌) | SIEMENS |
| 零件包装代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| 包装说明 | SMALL OUTLINE, R-PSSO-G3 | SMALL OUTLINE, R-PSSO-G3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级(Eas) | 120 mJ | 120 mJ | 120 mJ | 120 mJ | 120 mJ | 120 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| 最大漏极电流 (ID) | 9.5 A | 9.5 A | 9.5 A | 9.5 A | 9.5 A | 9.5 A |
| 最大漏源导通电阻 | 0.4 Ω | 0.4 Ω | 0.4 Ω | 0.4 Ω | 0.4 Ω | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G3 | R-PSSO-G3 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 2 | 2 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 38 A | 38 A | 38 A | 38 A | 38 A | 38 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | NO | NO |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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