| 型号 |
AGR09180EF |
AGR09180EF |
| 描述 |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FM-4 |
| 厂商名称 |
Broadcom(博通) |
AVAGO |
| 包装说明 |
FLANGE MOUNT, R-CDFM-F4 |
FLANGE MOUNT, R-CDFM-F4 |
| Reach Compliance Code |
compliant |
compliant |
| ECCN代码 |
EAR99 |
EAR99 |
| 其他特性 |
HIGH RELIABILITY |
HIGH RELIABILITY |
| 外壳连接 |
SOURCE |
SOURCE |
| 配置 |
COMMON SOURCE, 2 ELEMENTS |
COMMON SOURCE, 2 ELEMENTS |
| 最小漏源击穿电压 |
65 V |
65 V |
| FET 技术 |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| 最高频带 |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 |
R-CDFM-F4 |
R-CDFM-F4 |
| JESD-609代码 |
e0 |
e0 |
| 元件数量 |
2 |
2 |
| 端子数量 |
4 |
4 |
| 工作模式 |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| 最高工作温度 |
150 °C |
150 °C |
| 封装主体材料 |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
| 封装形状 |
RECTANGULAR |
RECTANGULAR |
| 封装形式 |
FLANGE MOUNT |
FLANGE MOUNT |
| 峰值回流温度(摄氏度) |
225 |
225 |
| 极性/信道类型 |
N-CHANNEL |
N-CHANNEL |
| 最大功率耗散 (Abs) |
500 W |
500 W |
| 认证状态 |
Not Qualified |
Not Qualified |
| 表面贴装 |
YES |
YES |
| 端子面层 |
TIN LEAD |
TIN LEAD |
| 端子形式 |
FLAT |
FLAT |
| 端子位置 |
DUAL |
DUAL |
| 处于峰值回流温度下的最长时间 |
30 |
30 |
| 晶体管应用 |
AMPLIFIER |
AMPLIFIER |
| 晶体管元件材料 |
SILICON |
SILICON |