型号 |
71V416S15BEGI8 |
71V416S15BEG |
71V416S15BEG8 |
描述 |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
Brand Name |
Integrated Device Technology |
Integrated Device Technology |
Integrated Device Technology |
是否无铅 |
不含铅 |
不含铅 |
不含铅 |
是否Rohs认证 |
符合 |
符合 |
符合 |
厂商名称 |
IDT (Integrated Device Technology) |
IDT (Integrated Device Technology) |
IDT (Integrated Device Technology) |
零件包装代码 |
CABGA |
CABGA |
CABGA |
包装说明 |
TFBGA, BGA48,6X8,30 |
BGA, BGA48,6X8,30 |
BGA, BGA48,6X8,30 |
针数 |
48 |
48 |
48 |
制造商包装代码 |
BEG48 |
BEG48 |
BEG48 |
Reach Compliance Code |
compliant |
compliant |
compliant |
ECCN代码 |
3A991.B.2.A |
3A991.B.2.A |
3A991.B.2.A |
Samacsys Description |
CHIP ARAY BGA 9.0 X 9.0 X MM X 0.75 PITC |
CHIP ARAY BGA 9.0 X 9.0 X MM X 0.75 PITC |
CHIP ARAY BGA 9.0 X 9.0 X MM X 0.75 PITC |
最长访问时间 |
15 ns |
15 ns |
15 ns |
I/O 类型 |
COMMON |
COMMON |
COMMON |
JESD-30 代码 |
S-PBGA-B48 |
S-PBGA-B48 |
S-PBGA-B48 |
JESD-609代码 |
e1 |
e1 |
e1 |
内存密度 |
4194304 bit |
4194304 bit |
4194304 bit |
内存集成电路类型 |
STANDARD SRAM |
STANDARD SRAM |
STANDARD SRAM |
内存宽度 |
16 |
16 |
16 |
湿度敏感等级 |
3 |
3 |
3 |
功能数量 |
1 |
1 |
1 |
端子数量 |
48 |
48 |
48 |
字数 |
262144 words |
262144 words |
262144 words |
字数代码 |
256000 |
256000 |
256000 |
工作模式 |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
最高工作温度 |
85 °C |
85 °C |
85 °C |
最低工作温度 |
-40 °C |
-40 °C |
-40 °C |
组织 |
256KX16 |
256KX16 |
256KX16 |
输出特性 |
3-STATE |
3-STATE |
3-STATE |
封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
封装代码 |
TFBGA |
BGA |
BGA |
封装等效代码 |
BGA48,6X8,30 |
BGA48,6X8,30 |
BGA48,6X8,30 |
封装形状 |
SQUARE |
SQUARE |
SQUARE |
封装形式 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
GRID ARRAY |
GRID ARRAY |
并行/串行 |
PARALLEL |
PARALLEL |
PARALLEL |
峰值回流温度(摄氏度) |
260 |
260 |
260 |
电源 |
3.3 V |
3.3 V |
3.3 V |
认证状态 |
Not Qualified |
Not Qualified |
Not Qualified |
最大待机电流 |
0.02 A |
0.02 A |
0.02 A |
最小待机电流 |
3 V |
3 V |
3 V |
最大压摆率 |
0.17 mA |
0.17 mA |
0.17 mA |
最大供电电压 (Vsup) |
3.6 V |
3.6 V |
3.6 V |
最小供电电压 (Vsup) |
3 V |
3 V |
3 V |
标称供电电压 (Vsup) |
3.3 V |
3.3 V |
3.3 V |
表面贴装 |
YES |
YES |
YES |
技术 |
CMOS |
CMOS |
CMOS |
温度等级 |
INDUSTRIAL |
INDUSTRIAL |
INDUSTRIAL |
端子面层 |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 |
BALL |
BALL |
BALL |
端子节距 |
0.75 mm |
0.75 mm |
0.75 mm |
端子位置 |
BOTTOM |
BOTTOM |
BOTTOM |
处于峰值回流温度下的最长时间 |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |