| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| 2SC2782 | Toshiba(东芝) | TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS) | 下载 |
| 2SC2782 | ASI [ASI Semiconductor, Inc] | NPN SILICON RF POWER TRANSISTOR | 下载 |
| 2SC2782 | Advanced Semiconductor, Inc. | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | 下载 |
| 2SC2782A | Toshiba(东芝) | VHF BAND, Si, NPN, RF POWER TRANSISTOR | 下载 |
RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6
| 参数名称 | 属性值 |
| 包装说明 | FLANGE MOUNT, O-CXFM-F6 |
| 针数 | 6 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 外壳连接 | EMITTER |
| 最大集电极电流 (IC) | 20 A |
| 基于收集器的最大容量 | 390 pF |
| 集电极-发射极最大电压 | 16 V |
| 配置 | Single |
| 最小直流电流增益 (hFE) | 10 |
| 最高频带 | VERY HIGH FREQUENCY BAND |
| JESD-30 代码 | O-CXFM-F6 |
| 端子数量 | 6 |
| 最高工作温度 | 175 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 220 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | UNSPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved