Freescale Semiconductor
Technical Data
Document Number: MWE6IC9100N
Rev. 3, 12/2008
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on--chip
matching that makes it usable from 869 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Final Application
•
Typical GSM Performance: V
DD
= 26 Volts, I
DQ1
= 120 mA, I
DQ2
= 950 mA,
P
out
= 100 Watts CW, f = 960 MHz
Power Gain — 33.5 dB
Power Added Efficiency — 54%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 230 mA, I
DQ2
=
870 mA, P
out
= 50 Watts Avg., Full Frequency Band (869--960 MHz)
Power Gain — 35.5 dB
Power Added Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = --63 dBc
Spectral Regrowth @ 600 kHz Offset = --81 dBc
EVM — 2% rms
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 120 W CW
P
out
.
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MWE6IC9100NR1
MWE6IC9100GNR1
MWE6IC9100NBR1
960 MHz, 100 W, 26 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618-
-02
TO-
-270 WB-
-14
PLASTIC
MWE6IC9100NR1
ARCHIVE INFORMATION
CASE 1621-
-02
TO-
-270 WB-
-14 GULL
PLASTIC
MWE6IC9100GNR1
CASE 1617-
-02
TO-
-272 WB-
-14
PLASTIC
MWE6IC9100NBR1
V
DS1
RF
in
RF
out
/V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
NC
V
DS1
NC
NC
NC
RF
in
RF
in
NC
V
GS1
V
GS2
V
DS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out
/V
DS2
13
RF
out
/V
DS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2007--2008. All rights reserved.
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +66
--0.5, +6
--65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
GSM Application
(P
out
= 100 W CW)
Stage 1, 26 Vdc, I
DQ1
= 120 mA
Stage 2, 26 Vdc, I
DQ2
= 950 mA
Stage 1, 28 Vdc, I
DQ1
= 230 mA
Stage 2, 28 Vdc, I
DQ2
= 870 mA
Symbol
R
θJC
1.82
0.38
1.77
0.44
Value
(2,3)
Unit
°C/W
ARCHIVE INFORMATION
GSM EDGE Application
(P
out
= 50 W Avg.)
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
B (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 35
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 120 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 26 Vdc, I
D
= 120 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.5
—
6
2
2.7
9.4
3.5
—
12
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 290
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 950 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 26 Vdc, I
D
= 950 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Power Gain
Input Return Loss
Power Added Efficiency
P
out
@ 1 dB Compression Point, CW
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.5
—
6
0.05
2
2.7
8.6
0.4
3.5
—
12
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ1
= 120 mA, I
DQ2
= 950 mA, f = 960 MHz
G
ps
IRL
PAE
P1dB
31
—
52
100
33.5
--15
54
112
36
--10
—
—
dB
dB
%
W
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 50 W Avg., I
DQ1
= 230 mA,
I
DQ2
= 870 mA, 869--894 MHz and 920--960 MHz EDGE Modulation
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
PAE
EVM
SR1
SR2
—
—
—
—
—
35.5
39
2
--63
--81
—
—
—
—
—
dB
%
% rms
dBc
dBc
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C8
V
DD1
+
C17
RF
INPUT
Z1
V
GG1
Z2
Z3
R1
C15
V
GG2
R2
C16
C19
C14
C12
C10
C24
C21
C13
C22
Z4
C11
1 NC
2
3 NC
4 NC
5 NC
6
7
8 NC
9
10
11
12 NC
Quiescent Current
Temperature
Compensation
14
C2
Z17
C4
13
Z5
Z16
C1
Z6
Z7
Z8
C3
Z9
C5
Z10
DUT
+
C7
C20
V
DD2
C23
Z14
Z15
RF
OUTPUT
C6
Z11
Z13
ARCHIVE INFORMATION
C18
V
DD1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.089″ x 0.083″ Microstrip
0.157″ x 0.315″ Microstrip
0.157″ x 0.397″ Microstrip
0.139″ x 0.060″ Microstrip
0.024″ x 0.386″ Microstrip
0.352″ x 0.902″ Microstrip
0.039″ x 0.607″ Microstrip
0.555″ x 1.102″ Microstrip
0.343″ x 0.083″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16, Z17
PCB
0.117″ x 0.083″ Microstrip
0.067″ x 0.431″ Microstrip
0.067″ x 0.084″ Microstrip
0.381″ x 0.067″ Microstrip
0.418″ x 0.084″ Microstrip
0.421″ x 0.084″ Microstrip
2.550″ x 0.157″ Microstrip
Taconic TLX8--0300, 0.030″,
ε
r
= 2.55
Figure 3. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1, C2
C3, C4, C5
C6
C7, C8, C9, C10, C11, C12,
C13, C14
C15, C16, C17, C18, C19,
C20, C21
C22, C23
C24
R1, R2
Description
10 pF Chip Capacitors
3.9 pF Chip Capacitors
0.5 pF Chip Capacitor
33 pF Chip Capacitors
6.8
μF
Chip Capacitors
470
μF,
63 V Electrolytic Capacitors, Radial
330 pF Chip Capacitor
4.7 kΩ, 1/8 W Chip Resistors
Part Number
ATC100B100GT500XT
ATC100B3R9BT500XT
ATC100B0R5BT500XT
ATC100B330JT500XT
C4532X5R1H685MT
222212018470
ATC100B331JT200XT
CRCW08054701FKEA
Manufacturer
ATC
ATC
ATC
ATC
TDK
Vishay
ATC
Vishay
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C9
Z12
MWE6IC9100N
Rev. 4
C17
V
DD1
C7
C8
C22
C20
C11
C1
C3
C23
V
DD2
ARCHIVE INFORMATION
CUT OUT AREA
C6
C13
V
GG1
C15
R1
C19
R2
V
GG2
C14
C12
C4
C2
C21
C24
C10
C9
C16
C18
Figure 4. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Component Layout
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
C5
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