RN1421∼RN1427
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1421, RN1422, RN1423, RN1424
RN1425, RN1426, RN1427
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
High current type (I
C
(max) = 800mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low V
CE
(sat)
Complementary to RN2421 to RN2427
Unit: mm
Equivalent Circuit and Bias Resister Values
Type No.
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
S-Mini
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Weight: 12 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1421 to 1427
RN1421 to 1424
Emitter-base voltage
RN1425, 1426
RN1427
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1421 to 1427
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
10
5
6
800
200
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1988-03
1
2014-03-01
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