FDP6670AS/FDB6670AS
January 2005
FDP6670AS/FDB6670AS
30V N-Channel PowerTrench
®
SyncFET
™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge.
The FDP6670AS
R
DS(ON)
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
•
31 A, 30 V.
R
DS(ON)
= 8.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 10.5 mΩ @ V
GS
= 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (28nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
and fast switching
•
High power and current handling capability
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
62
(Note 1)
Units
V
V
A
W
W/°C
°C
°C
150
62.5
0.5
–55 to +150
275
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.1
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB6670AS
FDB6670AS
FDP6670AS
FDP6670AS
Device
FDB6670AS
FDB6670AS_NL
(Note 3)
FDP6670AS
FDP6670AS_NL
(Note 4)
Reel Size
13’’
13’’
Tube
Tube
Tape width
24mm
24mm
n/a
n/a
Quantity
800 units
800 units
45
45
FDP6670AS/FDB6670AS Rev A(X)
©2005
Fairchild Semiconductor Corporation
FDP6670AS/FDB6670AS
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 1mA
Min
30
Typ
Max Units
V
Off Characteristics
I
D
= 26mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
30
500
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 1mA
1
I
D
= 26mA, Referenced to 25°C
V
GS
= 10 V, I
D
= 31 A
V
GS
= 4.5 V, I
D
= 26.5 A
V
GS
=10 V, I
D
=31 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 10 V
I
D
= 31 A
60
1.7
–3.4
6.8
8.4
9
84
3
V
mV/°C
8.5
10.5
12.5
mΩ
I
D(on)
g
FS
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
1570
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 15 mV, f = 1.0 MHz
440
160
1.9
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
9
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
12
27
19
16
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
16
25
13
28
V
DS
= 15 V,
I
D
= 31 A,
15
5
5
18
22
43
34
29
29
40
23
39
21
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Total Gate Charge, Vgs=10V
Gate–Source Charge, Vgs=5V
Gate–Drain Charge
Gate–Drain Charge
Drain–Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
3.
FDB6670AS_NL is a lead free product. The FDB6670AS_NL marking will appear on the reel label.
4.
FDP6670AS_NL is a lead free product. The FDP6670AS_NL marking will appear on the reel label.
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/µs
(Note 1)
(Note 1)
0.5
0.6
20
14
0.7
0.9
V
nS
nC
(Note 2)
FDP6670AS/FDB6670AS Rev A (X)
FDP6670AS/FDB6670AS
Typical Characteristics
150
V
GS
= 10V
6.0V
5.0V
4.0V
1.8
4.5V
V
GS
= 3.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
I
D
, DRAIN CURRENT (A)
120
90
3.5V
1.4
4.0V
4.5V
5.0V
60
1.2
6.0V
10V
30
3.0V
1
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
0.8
0
30
60
90
I
D
, DRAIN CURRENT (A)
120
150
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 31A
V
GS
= 10V
1.4
I
D
= 15.5A
0.017
1.2
T
A
= 125
o
C
0.012
1
0.007
0.8
T
A
= 25 C
o
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
0.002
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
80
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
60
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
V
GS
= 0V
1
T
A
= 125 C
25
o
C
-55
o
C
o
40
T
A
= 125 C
20
-55
o
C
25
o
C
0
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
o
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AS/FDB6670AS Rev A (X)
FDP6670AS/FDB6670AS
Typical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 31A
2400
f = 1MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
= 10V
20V
1800
C
iss
1200
8
6
15V
4
C
oss
600
2
C
rss
0
0
6
12
18
Q
g
, GATE CHARGE (nC)
24
30
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
1000
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
1s
10s
100
100µs
10ms
100m
800
SINGLE PULSE
R
θ
JC
= 2.1°C/W
T
A
= 25°C
600
10
DC
V
GS
= 10V
SINGLE PULSE
o
R
θ
JC
= 2.1 C/W
T
A
= 25 C
o
400
200
1
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.1
1
10
t
1
, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 2.1 °C/W
P(pk
t
1
t
2
SINGLE PULSE
0.01
T
J
- Tc = P * R
θJC
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP6670AS/FDB6670AS Rev A (X)
FDP6670AS/FDB6670AS
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670AS.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
I
DSS
, REVERSE LEAKAGE CURRENT (A)
0.01
T
A
= 125
o
C
CURRENT: 0.8A/div
0.001
T
A
= 100
o
C
0.0001
T
A
= 25
o
C
0.00001
0
10
20
V
DS
, REVERSE VOLTAGE (V)
30
TIME: 12.5ns/div
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
Figure 12. FDP6670AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
CURRENT: 0.8A/div
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
FDP6670AS/FDB6670AS Rev A (X)
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