Freescale Semiconductor
Technical Data
Document Number: MRF8P18265H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 30 Volts,
I
DQA
= 800 mA, V
GSB
= 1.3 V, P
out
= 72 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
15.9
16.1
16.0
η
D
(%)
44.8
43.4
43.7
Output PAR
(dB)
6.9
7.0
6.7
ACPR
(dBc)
--31.7
--31.7
--32.2
MRF8P18265HR6
MRF8P18265HSR6
1805-
-1880 MHz, 72 W AVG., 30 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
Output Power (2 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
280 Watts CW
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
446
4.5
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
CASE 375I-
-04
NI-
-1230-
-8
MRF8P18265HR6
CASE 375J-
-03
NI-
-1230S-
-8
MRF8P18265HSR6
N.C. 1
RF
inA
/V
GSA
2
RF
inB
/V
GSB
3
N.C. 4
(Top View)
8 VBW
A
7 RF
outA
/V
DSA
6 RF
outB
/V
DSB
5 VBW
B
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 72.5 W CW, 30 Vdc, I
DQA
= 800 mA, V
GSB
= 1.3 V, 1880 MHz
Case Temperature 90°C, 260 W CW
(4)
, 30 Vdc, I
DQA
= 800 mA, V
GSB
= 1.3 V, 1880 MHz
Symbol
R
θJC
Value
(2,3)
0.27
0.25
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
©
Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
MRF8P18265HR6 MRF8P18265HSR6
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DD
= 30 Vdc, I
DA
= 800 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.1
1.8
0.1
1.9
2.6
0.15
2.6
3.3
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQA
= 800 mA, V
GSB
= 1.3 V, P
out
= 72 W Avg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
13.8
41.0
6.0
—
16.0
43.7
6.7
--32.2
17.0
—
—
--28.0
dB
%
dB
dBc
Typical Broadband Performance
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQA
= 800 mA, V
GSB
= 1.3 V,
P
out
= 72 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
1805 MHz
1840 MHz
1880 MHz
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a symmetrical Doherty configuration.
(continued)
G
ps
(dB)
15.9
16.1
16.0
η
D
(%)
44.8
43.4
43.7
Output PAR
(dB)
6.9
7.0
6.7
ACPR
(dBc)
--31.7
--31.7
--32.2
MRF8P18265HR6 MRF8P18265HSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQA
= 800 mA, V
GSB
= 1.3 V, 1805--1880 MHz
Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 17 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 75 MHz Bandwidth @ P
out
= 72 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(2)
P1dB
P3dB
IMD
sym
—
—
—
224
280
72
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
88
0.4
0.01
0.005
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Measurement made with device in a symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
C5
C7
V
GSA
C3
C15
R2
C13
C11
C9
V
DSA
C17
CUT OUT AREA
C1
Z1
C2
C
C19
C21
C23
C25
R1
P
C18
C20
C22
C24
V
GSB
C8
C6
R3
C16
C4
V
DSB
C14
C12
MRF8P18265H
Rev. 3
C10
Figure 2. MRF8P18265HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P18265HR6(HSR6) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C13, C14,
C23, C24
C5, C6, C11, C12
C7, C8
C9, C10
C15, C16
C17, C18
C19, C20
C21, C22
C25
R1
R2, R3
Z1
PCB
Description
15 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
100
μF,
50 V Chip Capacitors
470
μF,
63 V Chip Capacitors
6.8
μF
Chip Capacitors
2.2 pF Chip Capacitors
0.8 pF Chip Capacitors
0.3 pF Chip Capacitors
0.1 pF Chip Capacitor
50
Ω,
4 W Chip Resistor
10
Ω,
1/4 W Chip Resistors
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
ATC600F150JT250XT
GRM55DR61H106KA88L
MCGPR50V107M8X11
MCGPR63V477M13X26--RH
C4532X7RIH685KT
ATC600F2R2BT250XT
ATC600F0R8BT250XT
ATC600F0R3BT250XT
ATC600F0R1BT250XT
CW12010T0050GBK
CRCW120610R0FKEA
GCS351--HYB1900
RF--35
Manufacturer
ATC
Murata
Multicomp
Multicomp
TDK
ATC
ATC
ATC
ATC
ATC
Vishay
Soshin
Taconic
MRF8P18265HR6 MRF8P18265HSR6
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
V
DD
= 30 Vdc, P
out
= 72 W (Avg.), I
DQA
= 800 mA, V
GSB
= 1.3 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
η
D
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
PARC
G
ps
IRL
η
D
, DRAIN
EFFICIENCY (%)
16.8
16.6
16.4
G
ps
, POWER GAIN (dB)
16.2
16
15.8
15.6
15.4
15.2
15
14.8
1760
ACPR
1780
1800
1820
1840
1860
1880
1900
47
46
45
44
43
--28
--29
ACPR (dBc)
--30
--31
--32
--33
1920
IRL, INPUT RETURN LOSS (dB)
--10
--13
--16
--19
--22
--25
--2
--2.4
--2.8
--3.2
--3.6
--4
PARC (dB)
f, FREQUENCY (MHz)
Figure 3. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 72 Watts Avg.
--20
--30
--40
--50
--60
--70
IM7--U
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 30 Vdc, P
out
= 17 W (PEP)
I
DQA
= 800 mA, V
GSB
= 1.3 Vdc
IM3--L
IM3--U
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
IM5--U
IM5--L
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
17.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
17
G
ps
, POWER GAIN (dB)
16.5
16
15.5
15
14.5
1
0
--1
--2
--3
--4
--5
--1 dB = 36 W
--2 dB = 52 W
60
η
D
ACPR
G
ps
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
--3 dB = 72 W
PARC
25
45
65
85
105
50
η
D
,
DRAIN EFFICIENCY (%)
40
30
20
10
0
125
--25
--27
--29
--31
--33
--35
--37
ACPR (dBc)
V
DD
= 30 Vdc, I
DQA
= 800 mA, V
GSB
= 1.3 Vdc
f = 1840 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
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