PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 2110 – 2170 MHz
Description
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212001E
Package H-36260-2
PTFA212001F
Package H-37260-2
Features
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-23
30
IM3 (dBc), ACPR (dBc)
-28
-33
-38
Efficiency
20
15
10
5
0
-43
-48
-53
34
36
sc
o
38
40
nt
42
44
46
IM3
Drain Efficiency (%)
in
ACPR
48
ue
25
d
1 of 11
Average Output Power (dBm)
di
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– Discontinued Products
pr
•
•
•
•
•
•
•
2-Carrier WCDMA Drive-up
•
od
uc
ts
Broadband internal matching
Thermally-enhanced packages, Pb-free and
RoHS compliant
Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35.5 dBc
- Adjacent channel power = –40 dBc
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 70 W
- Linear Gain = 15.5 dB
- Efficiency = 34%
- Adjacent channel power = –37 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 54%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V,
200 W (CW) output power
*See Infineon distributor for future availability.
Rev. 07, 2017-07-19
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements
(tested in Infineon test fixture)
ƒ
1
= 2135 MHz, ƒ
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 50 W average
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15.3
26.5
—
Typ
15.8
28
Max
—
—
–34
Unit
dB
%
dBc
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
od
uc
ts
IMD
–35.5
η
D
Min
—
—
—
Typ
Max
—
—
—
Unit
dB
%
dBc
pr
η
D
Conditions
15.8
38.5
–28
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.6 A
V
GS
= 10 V, V
DS
= 0 V
in
Characteristic
ue
DC Characteristics
d
IMD
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Data Sheet
– Discontinued Products
di
sc
o
nt
2 of 11
Rev. 07, 2017-07-19
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
625
3.57
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA212001E
PTFA212001F
V4
V4
H-36260-2
H-37260-2
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
pr
35
Package Type
Package Description
od
uc
ts
T
STG
R
θJC
–40 to +150
0.28
Return Loss
Efficiency
Gain
2090
2130
2170
Marking
PTFA212001E
PTFA212001F
Typical Performance
(data taken in a production test fixture)
V
DD
= 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-30
-35
2.0 A
-40
-45
-50
1.6 A
-55
35
37
39
41
43
45
47
nt
Two-carrier WCDMA at Selected Biases
in
ue
d
Broadband Performance
V
DD
= 30 V, I
DQ
= 1600 mA, P
OUT
= 50.0 dBm
sc
o
-5
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
di
1.4 A
30
25
20
15
10
2050
-15
-20
-25
-30
-35
2250
1.8 A
2210
Average Output Power (dBm)
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
– Discontinued Products
3 of 11
Rev. 07,
2017-07-19
Input Return Loss (dB)
-10
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
Adjacent Channel Power Ratio (dB)
60
50
40
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2170 MHz
18
17
T
CASE
= 25°C
T
CASE
= 90°C
-35
ACPR Up
ACPR Low
Efficiency
40
od
uc
ts
ACPR
33
35
37
39
41
43
45
47
49
Drain Efficiency (%)
-40
30
Gain (dB)
16
15
14
13
0
40
80
120
160
200
Gain
Efficiency
-45
20
30
20
10
240
-50
10
pr
-55
0
Output Power (W)
Average Output Power (dBm)
Voltage Sweep
in
ue
d
2-Tone Drive-up at Optimum I
DQ
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-20
50
45
35
30
25
20
15
10
5
0
45
47
49
51
53
55
tone spacing = 1 MHz, P
OUT
(PEP) = 53 dBm
sc
o
-10
-15
nt
I
DQ
= 1600 mA, ƒ = 2140 MHz,
50
Intermodulation Distortion (dBc)
Gain (dB), Drain Efficiency (%)
45
40
35
30
25
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
39
41
3rd Order IMD (dBc)
-20
-25
-30
-35
-40
-45
23
25
di
IM3 Up
IM3
IM5
Gain
20
15
10
IM7
43
27
29
31
33
Supply Voltage (V)
Output Power, PEP (dBm)
Data Sheet
– Discontinued Products
4 of 11
Rev. 07,
2017-07-19
Drain Efficiency (%)
Efficiency
Efficiency
40
Drain Efficiency (%)
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