d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 85 °C/W.
S14-1351-Rev. C, 30-Jun-14
Document Number: 70359
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7236DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Sorce-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 10 A, V
GS
= 0 V
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.8
40
30
19
21
60
80
1.2
80
60
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
Ω,
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω,
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4000
650
300
68
31
7.5
5
3.5
30
100
80
22
10
15
60
10
-
-
-
105
47
-
-
-
45
150
120
35
15
25
90
15
ns
Ω
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 20.7 A
V
GS
= 2.5 V, I
D
= 17.9 A
V
DS
= 10 V, I
D
= 20.7 A
20
-
-
0.6
-
-
-
20
-
-
-
-
19
-4.3
-
-
-
-
-
0.0042
0.0056
120
-
-
-
1.5
± 100
1
10
-
0.0052
0.0070
-
V
mV/°C
V
nA
μA
A
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1351-Rev. C, 30-Jun-14
Document Number: 70359
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7236DP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
80
10
T
C
= - 55 °C
60
I
D
- Drain Current (A)
V
GS
= 5 V thru 2.5 V
I
D
- Drain Current (A)
8
T
C
= 25 °C
6
Vishay Siliconix
40
2V
4
20
2
T
C
= 125 °C
1.5 V
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0065
4800
C
iss
R
DS(on)
- On-Resistance (Ω)
0.0060
3600
V
GS
= 2.5 V
0.0055
C - Capacitance (pF)
2400
0.0050
1200
0.0045
V
GS
= 4.5 V
C
rss
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
C
oss
0.0040
0
20
40
I
D
- Drain Current (A)
60
80
0
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.6
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
I
D
= 20.7 A
1.4
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
V
DS
= 16 V
6
1.2
4.5 V
1.0
4
2
0.8
0
0
20
40
60
80
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
S14-1351-Rev. C, 30-Jun-14
On-Resistance vs. Junction Temperature
Document Number: 70359
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7236DP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
0.012
0.011
R
DS(on)
- On-Resistance (Ω)
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
25 °C
125 °C
I
D
= 20.7 A
Vishay Siliconix
I
S
- Source Current (A)
T
J
= 150 °C
10
T
J
= 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.002
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
1.4
I
D
= 250 µA
1.2
V
GS(th)
Variance (V)
40
Power (W)
1.0
30
0.8
20
0.6
10
0.4
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.01
0.1
1
10
Time (s)
100
1000
Threshold Voltage
100
Limited by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
100 µs
1 ms
10 ms
1
T
A
= 25 °C
Single Pulse
0.1
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.01
* V
GS
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S14-1351-Rev. C, 30-Jun-14
Document Number: 70359
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7236DP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
60
Vishay Siliconix
80
45
60
Package Limited
40
Power Dissipation (W)
I
D
- Drain Current (A)
30
15
20
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1351-Rev. C, 30-Jun-14
Document Number: 70359
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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