1N4151W-G
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 9.4 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
1N4151W-G
ORDERING CODE
1N4151W-G3-08 or 1N4151W-G3-18
CIRCUIT CONFIGURATION
Single
TYPE MARKING
AL
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load
(1)
Surge current
Power dissipation
(1)
TEST CONDITION
SYMBOL
V
R
V
RRM
VALUE
50
75
150
500
410
UNIT
V
V
mA
mA
mW
f
50 Hz
t < 1 s and T
j
= 25 °C
I
F(AV)
I
FSM
P
tot
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
450
150
-65 to +150
-55 to +150
UNIT
K/W
°C
°C
°C
Rev. 1.1, 22-Feb-18
Document Number: 85408
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4151W-G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 50 mA
V
R
= 50 V
V
R
= 20 V, T
j
= 150 °C
I
R
= 5 μA (pulsed)
V
F
= V
R
= 0 V
I
F
= 10 mA, I
R
= 10 mA
i
R
= 1 mA
I
F
= 10 mA, i
R
= 1 mA
V
R
= 6 V, R
L
= 100
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
75
2
4
2
MIN.
TYP.
MAX.
1.0
50
50
UNIT
V
nA
μA
V
pF
ns
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Leakage current
Reverse breakdown voltage
Diode capacitance
Reverse recovery time
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
- Admissible Power Dissipation (mW)
1000
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160180 200
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
100
T
j
= 100
°
C
10
25
°
C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
18742
V
F
- Forward Voltage (V)
18743
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
10000
r
f
- Dynamic Forward Resistance
(Ω)
T
j
= 25
°
C
f = 1 kHz
1000
C
D
(V
R
)/C
D
(0 V) - Relative Capacitance (pF)
1.1
1.0
0.9
T
j
= 25
°
C
f = 1 MHz
100
10
0.8
0.7
0
18664
1
0.01
18662
0.1
1
10
I
F
- Forward Current (mA)
100
2
4
6
8
10
V
R
- Reverse Voltage (V)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.1, 22-Feb-18
Document Number: 85408
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4151W-G
www.vishay.com
Vishay Semiconductors
10000
I
R
- Leakage Current (nA)
1000
100
10
V
R
= 50 V
1
0 20
18744
40 60 80 100 120 140 160 180 200
T
j
- Junction Temperature (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
I
½
= t
p
/T
t
p
I
FRM
T = 1/f
p
I
FRM
- Admissible Repetitive
Peak Forward Current (A)
10
½
=0
0. 1
0. 2
t
T
1
0. 5
18709
10
-5
10
-4
10
-3
10
-2
t
p
- Pulse Length (s)
10
-1
1
10
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.1, 22-Feb-18
Document Number: 85408
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4151W-G
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-123
0.1 (0.004) max.
Vishay Semiconductors
1.35 (0.053)
8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
0.15 (0.006)
0.10 (0.004)
1 (0.039)
0.2 (0.008)
0° to
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
0.65 (0.026)
0.45 (0.018)
3.85 (0.152)
3.55 (0.140)
1.40 (0.055)
1.7 (0.067)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.1, 22-Feb-18
Document Number: 85408
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.85 (0.033)
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000