NTTFS5826NL
Power MOSFET
Features
60 V, 24 mW, Single N−Channel,
m8FL
•
•
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Designs
Low Q
G(TOT)
to Minimize Switching Losses
Low Capacitance to Minimize Driver Losses
These are Pb−Free Devices
V
(BR)DSS
60 V
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R
DS(on)
MAX
24 mW @ 10 V
32 mW @ 4.5 V
N−Channel
D
Value
60
"20
20
14
Unit
V
V
A
S
W
1
Applications
I
D
MAX
20 A
Motor Drivers
DC−DC Converters
Synchronous Rectification
Power Management
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
YJ−mb
(Notes 1, 2, and 3)
Power Dissipation
R
YJ−mb
(Notes 1, 2,
and 3)
Continuous Drain
Current R
qJA
(Notes 1
& 3)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
mb
= 25°C
T
mb
= 100°C
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
G
19
10
8
6
3.1
1.6
133
−55
to
175
20
20
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
5826
A
Y
WW
G
S
S
S
G
5826
AYWWG
G
D
D
D
D
A
W
A
°C
A
mJ
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 14.4 A, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
T
L
260
°C
ORDERING INFORMATION
Device
NTTFS5826NLTAG
NTTFS5826NLTWG
Package
Shipping
†
WDFN8 1500/Tape & Reel
(Pb−Free)
WDFN8 5000/Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Mounting Board (top)
−
Steady
State (Notes 2, 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
7.9
48
Unit
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 2
1
Publication Order Number:
NTTFS5826NL/D
NTTFS5826NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
R
G
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 5.0 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 5.0 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 5.0 A, R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 48V, I
D
= 5.0A
T
A
= 25°C
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 5.0 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
9.0
15
14
5.4
7.0
10
17
3.5
18
28
25
12
12
20
30
6.0
ns
ns
850
85
50
8.4
1.0
2.5
3.9
16
1.5
25
nC
W
nC
pF
I
D
= 7.5 A
I
D
= 7.5 A
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
58.6
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.6
19
25
8
3.0
V
mV/°C
24
32
mW
V
DS
= 15 V, I
D
= 5.0 A
S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 7.5 A
0.8
0.7
15
12
4
13
nC
ns
2.3
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
4. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5826NL
TYPICAL CHARACTERISTICS
40
40
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
30
V
GS
=
10 V
V
GS
= 4.5 V
V
GS
= 3.8 V
V
GS
= 3.6 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
30
20
V
GS
= 3.2 V
20
T
J
= 25°C
10
T
J
= 125°C
T
J
=
−55°C
5
10
V
GS
= 2.8 V
0
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
0
1
2
3
4
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.040
T
J
= 25°C
0.055
I
D
= 7.5 A
T
J
= 25°C
0.045
0.030
V
GS
= 4.5 V
0.035
0.020
V
GS
= 10 V
0.025
0.015
2
4
6
8
10
0.010
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.10
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.90
1.70
1.50
1.30
1.10
0.90
0.70
0.50
−50
−25
0
25
50
75
100
125
150
175
100
I
D
= 7.5 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTTFS5826NL
TYPICAL CHARACTERISTICS
10
1000
C, CAPACITANCE (pF)
C
iss
800
600
400
200
C
rss
0
0
10
20
C
oss
30
40
50
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
V
DS
= 0 V
T
J
= 25°C
8
6
4
2
0
Q
T
Q
gs
Q
gd
V
DS
= 48 V
I
D
= 5 A
T
J
= 25°C
60
0
4
8
12
16
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
I
S
, SOURCE CURRENT (A)
V
DD
= 48 V
I
D
= 5 A
V
GS
= 4.5 V
t, TIME (ns)
t
r
10
t
d(off)
t
d(on)
t
f
40
V
GS
= 0 V
T
J
= 25°C
30
20
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
20
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
V
GS
= 10 V
Single Pulse
T
C
= 25°C
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 20 A
15
100
ms
1 ms
10 ms
10
ms
10
dc
10
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
0.1
100
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTTFS5826NL
TYPICAL CHARACTERISTICS
100
D = 0.5
10
R
qJA
(t)
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
1
10
100
1000
1
Figure 13. Thermal Response
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