NTMD2P01R2
Power MOSFET
−2.3 Amps, −16 Volts
Dual SOIC−8 Package
Features
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•
•
•
•
High Efficiency Components in a Single SOIC−8 Package
High Density Power MOSFET with Low R
DS(on)
Logic Level Gate Drive
SOIC−8 Surface Mount Package,
Mounting Information for SOIC−8 Package Provided
•
Pb−Free Packages are Available
Applications
V
DSS
−16
V
R
DS(ON)
Typ
100 mW @
−4.5
V
I
D
Max
−2.3
A
P−Channel
D
•
Power Management in Portable and Battery−Powered Products, i.e.:
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Thermal Resistance
−
Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 4)
Thermal Resistance
−
Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 4)
Thermal Resistance
−
Junction−to−Ambient
(Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
=
−16
Vdc, V
GS
=
−4.5
Vdc, Peak I
L
=
−5.0
Apk, L = 28 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
Value
−16
"10
175
0.71
−2.3
−1.45
−9.0
105
1.19
−2.97
−1.88
−12
62.5
2.0
−3.85
−2.43
−15
−55
to
+150
350
Unit
V
V
°C/W
W
A
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
°C
mJ
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
G
S
8
1
SOIC−8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
ED2P01
AYWW
G
G
1
S1 G1 S2 G2
ED2P01= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
T
L
260
°C
Device
NTMD2P01R2
NTMD2P01R2G
Package
SOIC−8
SOIC−8
(Pb−Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick
single sided), Steady State.
3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick
single sided), t
≤
10 seconds.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
©
Semiconductor Components Industries, LLC, 2006
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
February, 2006
−
Rev. 2
1
Publication Order Number:
NTMD2P01R2/D
NTMD2P01R2
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 5)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=
−250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
=
−16
Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
=
−16
Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Body Leakage Current
(V
GS
=
−10
Vdc, V
DS
= 0 Vdc)
Gate−Body Leakage Current
(V
GS
= +10 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
=
−250
mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
GS
=
−4.5
Vdc, I
D
=
−2.4
Adc)
(V
GS
=
−2.7
Vdc, I
D
=
−1.2
Adc)
(V
GS
=
−2.5
Vdc, I
D
=
−1.2
Adc)
Forward Transconductance
(V
DS
=
−10
Vdc, I
D
=
−1.2
Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V
DS
=
−16
Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
t
d(on)
(V
DD
=
−10
Vdc, I
D
=
−2.4
Adc,
V
GS
=
−4.5
Vdc,
R
G
= 6.0
W)
t
r
t
d(off)
t
f
t
d(on)
(V
DD
=
−10
Vdc, I
D
=
−1.2
Adc,
V
GS
=
−2.7
Vdc,
R
G
= 6.0
W)
t
r
t
d(off)
t
f
(V
DS
=
−16
Vdc,
V
GS
=
−4.5
Vdc,
I
D
=
−2.4
Adc)
Q
tot
Q
gs
Q
gd
V
SD
t
rr
(I
S
=
−2.4
Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300
ms
max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
t
a
t
b
Q
RR
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
540
215
100
10
35
33
29
15
40
35
35
10
1.5
5.0
−0.88
−0.75
37
16
21
0.025
750
325
175
20
65
60
55
−
−
−
−
18
−
−
−1.0
−
−
−
−
−
mC
Vdc
ns
nC
ns
ns
pF
V
GS(th)
−0.5
−
−
−
−
−
−0.90
2.5
0.070
0.100
0.110
4.2
−1.5
−
0.100
0.130
0.150
−
Vdc
mV/°C
W
V
(BR)DSS
−16
−
−
−
−
−
−
−12.7
−
−
−
−
−
−
−1.0
−10
−100
100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
I
GSS
nAdc
nAdc
R
DS(on)
g
FS
Mhos
SWITCHING CHARACTERISTICS
(Notes 6 and 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
BODY−DRAIN DIODE RATINGS
(Note 6)
Diode Forward On−Voltage
Reverse Recovery Time
(I
S
=
−2.4
Adc, V
GS
= 0 Vdc)
(I
S
=
−2.4
Adc, V
GS
= 0 Vdc, T
J
= 125°C)
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2
NTMD2P01R2
4
−I
D,
DRAIN CURRENT (AMPS)
V
GS
=
−2.1
V
V
GS
=
−10
V
V
GS
=
−4.5
V
V
GS
=
−2.5
V
5
T
J
= 25°C
−I
D,
DRAIN CURRENT (AMPS)
4
3
2
1
0
T
J
= 25°C
V
GS
=
−1.9
V
V
DS
> =
−10
V
3
2
V
GS
=
−1.7
V
1
V
GS
=
−1.5
V
0
T
J
= 100°C
1
1.5
T
J
= 55°C
2
2.5
3
0
2
4
6
8
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics.
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics.
0.2
T
J
= 25°C
0.12
T
J
= 25°C
0.15
0.1
V
GS
=
−2.7
V
0.1
0.08
V
GS
=
−4.5
V
0.06
0.05
0
2
4
6
8
0.04
1
1.5
2
2.5
3
3.5
4
4.5
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage.
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage.
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1
0.8
0.6
−50
I
D
=
−2.4
A
V
GS
=
−4.5
V
1000
V
GS
= 0 V
−I
DSS,
LEAKAGE (nA)
100
10
1
0.1
T
J
= 125°C
T
J
= 100°C
T
J
= 25°C
−25
0
25
75
50
100
125
T
J,
JUNCTION TEMPERATURE (°C)
150
0.01
0
4
8
12
16
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 5. On−Resistance Variation with
Temperature.
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Figure 6. Drain−to−Source Leakage Current
vs. Voltage.
NTMD2P01R2
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
1500
V
DS
= 0 V
C, CAPACITANCE (pF)
1200
900
600
300
0
C
iss
V
GS
= 0 V
T
J
= 25°C
5
QT
4
3
Q1
2
1
0
Q2
20
18
16
14
V
GS
12
10
8
I
D
=
−2.4
A
T
J
= 25°C
6
8
10
12
14
6
4
2
0
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C
rss
C
iss
C
oss
C
rss
10
5
0
−V
GS
−V
DS
5
10
15
20
V
DS
0
2
4
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
V
DD
=
−10
V
I
D
=
−1.2
A
V
GS
=
−2.7
V
t
d (off)
t
r
t
f
t, TIME (ns)
t, TIME (ns)
100
t
r
t
d (off)
t
d (on)
1.0
10
R
G,
GATE RESISTANCE (OHMS)
100
t
f
10
t
d
(on)
V
DD
=
−10
V
I
D
=
−2.4
A
V
GS
=
−4.5
V
1.0
1.0
10
R
G,
GATE RESISTANCE (OHMS)
100
10
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
2
−I
S,
SOURCE CURRENT (AMPS)
1.6
1.2
0.8
0.4
0
0.4
V
GS
= 0 V
T
J
= 25°C
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
di/dt
I
S
t
rr
t
a
t
b
TIME
t
p
I
S
0.5
0.6
0.7
0.8
0.9
1
0.25 I
S
−V
SD,
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
versus Current
Figure 12. Diode Reverse Recovery Waveform
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