IRLR120NPbF
IRLU120NPbF
l
l
l
l
l
Surface Mount (IRLR120N)
Straight Lead (IRLU120N)
Advanced Process Technology
HEXFET
®
Power MOSFET
D
Fast Switching
G
S
D
V
DSS
= 100V
R
DS(on)
= 0.185Ω
I
D
= 10A
Fully Avalanche Rated
l
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest possible
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient device for use in a wide variety of
applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight lead
version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.5 watts are possible in typical
surface mount applications.
S
G
D-Pak
IRLR120NPbF
I-Pak
IRLU120NPbF
Note
G
S
D
Base Part Number
Package Type
IRLR120NPbF
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
75
Tube
Orderable Part Number
IRLR120NPbF
IRLR120NTRPbF
IRLR120NTRLPbF
IRLR120NTRRPbF
IRLU120NPbF
EOL notice # 289
IRLU120NPbF
IPak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
10
7.0
35
48
0.32
± 16
85
6.0
4.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
1
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
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2014 International Rectifier
Typ.
–––
–––
–––
Submit Datasheet Feedback
Max.
3.1
50
110
Units
°C/W
July 9, 2014
IRLR/U120NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
100 ––– –––
V
V
GS
= 0V, I
D
= 250μA
––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.185
V
GS
= 10V, I
D
= 6.0A
–––
––– 0.225
Ω
V
GS
= 5.0V, I
D
= 6.0A
––– ––– 0.265
V
GS
= 4.0V, I
D
= 5.0A
1.0
––– 2.0
V
V
DS
= V
GS
, I
D
= 250μA
3.1
––– –––
S
V
DS
= 25V, I
D
= 6.0A
––– ––– 25
V
DS
= 100V, V
GS
= 0V
μA
––– ––– 250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
––– ––– 20
I
D
= 6.0A
––– ––– 4.6
nC
V
DS
= 80V
––– ––– 10
V
GS
= 5.0V, See Fig. 6 and 13
–––
4.0 –––
V
DD
= 50V
–––
35 –––
I
D
= 6.0A
ns
–––
23 –––
R
G
= 11Ω, V
GS
= 5.0V
–––
22 –––
R
D
= 8.2Ω, See Fig. 10
Between lead,
4.5
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
––– 440 –––
V
GS
= 0V
–––
97 –––
pF
V
DS
= 25V
–––
50 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
10
––– –––
showing the
A
G
integral reverse
––– –––
35
p-n junction diode.
S
––– ––– 1.3
V
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
––– 110 160
ns
T
J
= 25°C, I
F
=6.0A
––– 410 620
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 4.7mH
R
G
= 25Ω, I
AS
= 6.0A. (See Figure 12)
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and
center of die contact
I
SD
≤
6.0A, di/dt
≤
340A/μs, V
DD
≤
V
(BR)DSS
,
Uses IRL520N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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©
2014 International Rectifier
Submit Datasheet Feedback
July 9, 2014
IRLR/U120NPbF
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
10
2.5V
1
1
2.5V
0.1
0.1
20μs PULSE WIDTH
T
J
= 25°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
0.1
0.1
20μs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 10A
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
10
2.5
T
J
= 175°C
2.0
1.5
1
1.0
0.5
0.1
2
4
6
V
DS
= 50V
20μs PULSE WIDTH
8
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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2014 International Rectifier
IRLR/U120NPbF
800
C, Capacitance (pF)
600
C
iss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 6.0A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
12
9
400
C
oss
200
6
C
rss
3
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 13
15
20
25
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
10
T
J
= 175°C
T
J
= 25°C
I
D
, Drain Current (A)
10
100μs
1ms
1
10ms
1
0.1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
0.1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
100
1.4
1000
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
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July 9, 2014
IRLR/U120NPbF
10
V
DS
8
R
D
V
GS
R
G
I
D
, Drain Current (Amps)
D.U.T.
+
-
V
DD
6
5.0V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4
Fig 10a.
Switching Time Test Circuit
2
V
DS
90%
A
25
50
75
100
125
150
175
0
T
C
, Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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©
2014 International Rectifier
Submit Datasheet Feedback
July 9, 2014
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