Not recommended for new designs. For new designs, we recommend IRS2109SPBF or 2EDL05N06PF
IRS2609DSPbF
June 1, 2011
IRS2609DSPbF
HALF-BRIDGE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage – dV/dt immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V, 5 V and 15 V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Internal 530 ns dead-time
Lower di/dt gate driver for better noise immunity
Shut down input turns off both channels
Integrated bootstrap diode
RoHS compliant
Packages
•
•
•
•
•
•
•
•
•
•
•
8-Lead SOIC
Product Summary
V
OFFSET
I
O+/-
V
OUT
t
on/off
(typ.)
Dead Time
600 V max.
120 mA / 250 mA
10 V – 20 V
750 ns & 200 ns
530 ns
Description
The IRS2609D is a high voltage, high speed power
MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with Standard
CMOS or LSTTL output, down to 3.3 V logic. The output
drivers feature a high pulse current buffer stage designed
for minimum driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET or IGBT
in the high side configuration which operates up to 600 V.
Applications:
*Air Conditioner
*Micro/Mini Inverter Drives
*General Purpose Inverters
*Motor Control
Typical Connection
www.irf.com
1
Not recommended for new designs. For new designs, we recommend IRS2109SPBF or 2EDL05N06PF
IRS2609DSPbF
Qualification Information
†
Qualification Level
Industrial
††
Comments: This IC has passed JEDEC’s
Industrial qualification. IR’s Consumer
qualification level is granted by extension of the
higher Industrial level.
MSL2, 260°C
(per IPC/JEDEC J-STD-020)
Class 2
(per JEDEC standard JESD22-A114)
Class B
(per EIA/JEDEC standard EIA/JESD22-A115)
Class I, Level A
(per JESD78)
Yes
Moisture Sensitivity Level
Human Body Model
ESD
Machine Model
IC Latch-Up Test
RoHS Compliant
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information.
www.irf.com
2
Not recommended for new designs. For new designs, we recommend IRS2109SPBF or 2EDL05N06PF
IRS2609DSPbF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
COM
dV
S
/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (IN & SD)
Logic ground
Allowable offset supply voltage transient
Package power dissipation @ TA ≤ +25 °C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
V
B
- 20
V
S
- 0.3
-0.3
-0.3
COM -0.3
V
CC
- 20
—
—
—
—
-50
—
Max.
620
V
B
+ 0.3
V
B
+ 0.3
20
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
0.625
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The V
S
and COM offset rating
are tested with all supplies biased at 15 V differential.
Symbol
V
B
V
S
V
St
V
HO
V
CC
V
LO
V
IN
Definition
High side floating supply absolute voltage
Static High side floating supply offset voltage
Transient High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (IN & SD)
Min.
V
S
+10
COM- 8(Note 1)
-50 (Note2)
V
S
10
0
Max.
V
S
+20
600
600
V
B
20
V
CC
Units
V
V
SS
V
CC
T
A
Ambient temperature
-40
125
°C
Note 1:
Logic operational for V
S
of -8 V to +600 V. Logic state held for V
S
of -8 V to – V
BS.
Note 2:
Operational for transient negative VS of COM - 50 V with a 50 ns pulse width. Guaranteed by design. Refer
to the Application Information section of this datasheet for more details.
www.irf.com
3
Not recommended for new designs. For new designs, we recommend IRS2109SPBF or 2EDL05N06PF
IRS2609DSPbF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, COM = V
CC
, C
L
= 1000 pF, T
A
= 25 °C, DT = V
SS
unless otherwise specified.
Symbol
t
on
t
off
t
sd
MT
t
r
t
Definition
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Delay matching, HS & LS turn-on/off
Turn-on rise time
Turn-off fall time
Deadtime: LO turn-off to HO turn-on(DT
LO-HO)
HO turn-off to LO turn-on (DT
HO-LO)
Delay matching time (t
ON
, t
OFF
)
Deadtime matching = DT
LO-HO
- DT
HO-LO
&
Min Typ Max Units Test Conditions
—
—
—
—
—
—
350
—
—
750
250
250
—
150
50
530
—
—
1100
400
400
60
220
80
800
60
60
ns
V
S
= 0 V
V
S
= 0 V
V
S
= 0 V or 600 V
V
S
= 0 V or 600 V
f
DT
MT
MDT
V
IN
= 0 V & 5 V
Without
external
deadtime
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
CC
= COM, DT = V
CC
and T
A
= 25 °C unless otherwise specified. The V
IL,
V
IH
and I
IN
parameters are referenced to V
CC
/COM and are applicable to the respective input leads: IN and SD. The V
O,
I
O
and
Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
SD, TH+
I
SD, TH-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Rbs
Definition
logic “1” input voltage for HO & logic “0” for LO
logic “0” input voltage for HO & logic “1” for LO
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
SD input positive going threshold
SD input negative going threshold
V
CC
and V
BS
supply undervoltage positive going
Threshold
V
CC
and V
BS
supply undervoltage negative going
Threshold
Hysteresis
Output high short circuit pulsed current
Output low short circuit pulsed current
Bootstrap resistance
Min Typ Max Units Test Conditions
2.2
—
—
—
—
—
—
—
0.8
0.3
—
45
—
0.8
1.4
0.6
50
70
A
V
I
O
= 20 mA
I
O
= 20 mA
V
B
= V
S
= 600 V
V
IN
= 0 V or 4 V
V
IN
= 0 V or 4 V
V
IN
= 4 V
V
IN
= 0 V
1000 2000 3000
—
—
—
—
8.0
7.4
—
120
250
—
5
—
15
10
8.9
8.2
0.7
200
350
200
20
2
30
20
9.8
9.0
—
—
V
mA
—
—
Ohm
V
O
= 0 V,
PW ≤ 10 us
V
O
= 15 V,
PW ≤ 10 us
www.irf.com
4
Not recommended for new designs. For new designs, we recommend IRS2109SPBF or 2EDL05N06PF
IRS2609DSPbF
Functional Block Diagrams
Lead Definitions
Symbol
IN
SD
V
B
HO
V
S
V
CC
LO
COM
Description
Logic input for high and low side gate driver outputs (HO and LO), in phase
Logic input for shutdown
High side floating supply
High side gate drive output
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
Low side return
Lead Assignments
IRS2609DS
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5
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